onsemi NTK Type P-Channel MOSFET 870mA 20V Enhancement Mode 3-Pin SOT-723 NTK3139PT1G

onsemi NTK3139PT1G is a high-quality P-Channel MOSFET transistor designed for reliable power switching and amplification in electronic circuits. Featuring an enhancement mode channel with a maximum continuous drain current of 870mA and a drain-source voltage rating of 20V, this device is built to support efficient and stable operation in compact and surface-mount technology (SMT) formats.

The SOT-723 package measures 1.25mm in length, 850µm in width, and 550µm in height, enabling use in space-constrained PCB designs. This MOSFET operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for industrial and automotive ambient conditions, although it does not meet automotive standards itself.

Electrical characteristics such as a maximum drain-source resistance of 2.2Ω and a forward voltage of -1.2V ensure low conduction losses and efficient power management. The gate-source voltage rating of -6V to +6V facilitates robust switching control, enhancing device durability during operation.

This component dissipates up to 550mW of power, highlighting its capability for moderate power handling in circuits including power regulation, signal switching, and amplification. Its surface mount design promotes automated assembly and optimized manufacturing throughput.

Typical applications include electronic components for power management, industrial electronics, discrete semiconductor devices, and other electronic circuits requiring dependable MOSFET performance. This product is sourced new and originates from India by default.

This MOSFET features enhancement mode operation for efficient switching. It has a maximum drain-source resistance of 2.2 ohms ensuring low power loss. Surface mountable in compact SOT-723 package with dimensions 1.25mm x 850µm x 550µm.

Designed to operate from -55°C to 150°C for reliable performance in varied environments. Maximum power dissipation is 550mW allowing for stable operation in power circuits. Gate-source voltage range is -6V to +6V for robust control characteristics.

Forward voltage drop is -1.2V contributing to overall circuit efficiency. Ideal for use in electronic, industrial, and power management applications requiring discrete semiconductor devices. Explore the extensive range of semiconductor devices and MOSFET components on EnvMart for your design and manufacturing needs.

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