STMicroelectronics N-channel MDmesh M5 Type N-Channel MOSFET, 84 A, 710 V, Enhancement Mode, 3-Pin TO-247 STW88N65M5

STMicroelectronics STW88N65M5 is a high-performance N-channel MDmesh M5 power MOSFET designed for demanding electronic applications. It supports a maximum continuous drain current of 84 amperes and a drain-source voltage of 710 volts, making it ideal for heavy-duty switching and power management tasks. This enhancement-mode MOSFET is packaged in a robust 3-pin TO-247 form factor suitable for through-hole mounting, facilitating easy integration in various circuit boards.

The device excels in energy-efficient operations featuring a low on-state resistance of 29 milliohms and a maximum power dissipation rating of 450 watts. It can operate in a wide temperature range from -55°C to 150°C, ensuring reliable performance even under extreme environmental conditions. The typical gate charge of 204 nanocoulombs and maximum gate-source voltage of 25 volts allow high-speed switching with robust gate protection.

STW88N65M5 MOSFETs are optimized for applications such as power factor correction (PFC), pulse width modulation (PWM) topologies, solar power converters, and electronic lighting controls, where efficient power conversion and low losses are critical. Their compact footprint combined with superior electrical characteristics aids in building compact, efficient, and reliable power electronics.

This MOSFET features an enhancement mode for efficient switching applications. Maximum power dissipation is rated at 450 watts for robust performance. Low on-state resistance of 29 milliohms minimizes conduction losses. Operates safely up to a maximum temperature of 150°C and down to -55°C.

Typical gate charge of 204 nanocoulombs enables fast switching speeds. Designed specifically for high-power PFC and PWM topologies in energy-conscious applications. Compact TO-247 package supports through-hole mounting with three pins.

Highly suitable for solar power converters, power supplies, and electronic lighting controls. Maximum gate-source voltage is 25 volts, ensuring gate protection. Durable with forward voltage of 1.5 volts enhancing reliability during operation.

This product is an excellent choice for industrial, construction, renewable energy, and commercial electronic applications requiring efficient power semiconductor solutions. It contributes to reducing energy consumption and improving system reliability, making it a preferred device in power electronic design.

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