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Vishay N-Channel Power MOSFET 2.4 A 500 V Enhancement 3-Pin TO-252 IRFR420TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFR420TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IRFR420 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 710-4657Brand: VishayManufacturers Part No.: IRFR420TRPBF |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
Key Features
- Features a 3-pin TO-252 surface-mount package for compact board assembly.
- Supports a maximum power dissipation of 42 W for efficient thermal management.
- Designed for operation from -55°C to 150°C for extreme temperature environments.
- Offers a gate charge of 19 nC at Vgs for rapid switching performance.
- Provides a maximum gate-source voltage range of -20 V to +20 V.
- Ideal for industrial motor control, isolated DC-DC converters, and lamp or heater switching circuits.
- Includes a 3 Ω maximum drain-source resistance for predictable conduction losses.
- Compliant with RoHS 2002/95/EC and IEC 61249-2-21 standards.
Product Description
Vishay IRFR420TRPBF is a high-voltage N-channel Power MOSFET designed for industrial and electronic power switching applications. It supports a maximum continuous drain current of 2.4 A and a drain-source voltage of 500 V, making it suitable for robust switching tasks in switching power supplies and power management systems.
Packaged in a compact 3-pin TO-252 surface-mount configuration, this MOSFET enables efficient PCB-level assembly with standard SMT reflow processes. The device supports a maximum power dissipation of 42 W, necessitating adequate thermal management measures such as copper area expansion and heat sinking on the PCB.
It operates effectively in a wide temperature range from -55°C up to 150°C, making it applicable for demanding industrial environments and rugged electronics. The gate charge of 19 nC at Vgs ensures efficient switching capability while the gate-source voltage rating of ±20 V provides a strong gate-drive margin for reliable operation.
Applications include high-voltage switch-mode power supplies, motor-control front ends, isolated DC-DC converters, lamp switching, and heater controls. The device's 3 Ω maximum Rds(on) offers predictable conduction losses, enabling design accuracy in power budgeting.
3-pin TO-252 surface-mount package. 42 W maximum power dissipation. Wide operating temperature range: -55°C to 150°C. 19 nC typical gate charge at Vgs. ±20 V maximum gate-source voltage. Suitable for industrial and rugged electronic applications.
RoHS compliant.
Choose Vishay IRFR420TRPBF for efficient, reliable high-voltage power switching in industrial, manufacturing, and commercial electronics. Explore a wide range of semiconductor products in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.4 A.
It has a maximum drain-source voltage rating of 500 V.
This MOSFET supports a maximum power dissipation of 42 W.
It operates effectively in a temperature range from -55°C to 150°C.
The typical gate charge at Vgs is 19 nC.
The maximum gate-source voltage is ±20 V.
It is packaged in a 3-pin TO-252 surface-mount configuration.
The maximum drain-source resistance (Rds(on)) is 3 Ω.
It is suitable for applications such as industrial motor control, isolated DC-DC converters, and lamp or heater switching circuits.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
Yes, it is compliant with RoHS 2002/95/EC and IEC 61249-2-21 standards.
This model features an N-channel enhancement mode.
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