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ROHM Power N-Channel MOSFET 30 A, 600 V, TO-3PF Package, 3-Pin Surface Mount R6030KNZ

Category Power MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Model R6030KNZ
Mount Type Surface
Series R6030KNZ
Maximum Operating Temperature 150°C
Package Type TO-3PF
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 130mΩ
Channel Mode N
Maximum Power Dissipation Pd 86W
Typical Gate Charge Qg @ Vgs 56nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V

Key Features

  • Supports a maximum continuous drain current of 30 A ensuring robust performance.
  • 600 V maximum drain-source voltage suitable for high-voltage circuits.
  • High power dissipation capacity of 86 W for effective heat management.
  • TO-3PF package with surface mount type and 3 pins for reliable installation.
  • Low on-resistance of 130 mΩ contributing to efficient switching.
  • Fast switching speed and fast reverse recovery time for improved circuit efficiency.
  • Typical gate charge of 56 nC ensures low gate drive power.
  • Wide operating temperature range from -55°C to 150°C for industrial applications.

Product Description

The ROHM R6030KNZ is a power N-Channel MOSFET optimized for switching applications where high current and voltage handling is required. It supports a continuous drain current of up to 30 A and can withstand drain-source voltages as high as 600 V.

Housed in a TO-3PF package with surface mount configuration and 3 pins, this MOSFET provides robust mechanical and electrical reliability in compact PCB designs. It delivers efficient operation due to its low on-resistance of 130 mΩ combined with a typical gate charge of 56 nC, allowing for fast switching speed and low power loss.

The device operates reliably over a wide temperature range from -55°C to 150°C, suitable for demanding industrial, automotive (though no automotive standard certification), and power management applications. Its maximum power dissipation rating of 86 W allows effective handling of thermal loads during high power operation.

Additional features include a forward voltage of 1.5 V and a maximum gate-source voltage rating of 30 V. The device comes with lead-free plating and complies with RoHS environmental safety standards, ensuring it meets modern regulatory requirements.

Supports a maximum continuous drain current of 30 A ensuring robust performance. 600 V maximum drain-source voltage suitable for high-voltage circuits. High power dissipation capacity of 86 W for effective heat management.

TO-3PF package with surface mount type and 3 pins for reliable installation. Low on-resistance of 130 mΩ contributing to efficient switching. Fast switching speed and fast reverse recovery time for improved circuit efficiency.

Typical gate charge of 56 nC ensures low gate drive power. Wide operating temperature range from -55°C to 150°C for industrial applications. Maximum gate-source voltage of ±30 V allowing flexible control voltages. Lead-free plating and RoHS compliant guaranteeing environmental safety.

This Power MOSFET is ideal for industrial power electronics, motor control circuits, power supplies, and other systems requiring efficient high-voltage and high-current switching. Explore more power semiconductors and discrete devices within EnvMart's robust electronics category for industrial and commercial applications.

ROHM Power N-Channel MOSFET 30 A, 600 V, TO-3PF Package, 3-Pin Surface Mount R6030KNZ
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 A, ensuring robust performance in high-current applications.

It has a maximum drain-source voltage rating of 600 V, making it suitable for high-voltage circuits.

The R6030KNZ has a maximum power dissipation capacity of 86 W, allowing effective heat management during operation.

This model is housed in a TO-3PF package with a surface mount configuration and 3 pins for reliable installation.

The on-resistance is low at 130 mΩ, contributing to efficient switching performance.

The typical gate charge is 56 nC, which ensures low gate drive power requirements.

It operates over a wide temperature range from -55°C to 150°C, suitable for various industrial applications.

The maximum gate-source voltage rating is ±30 V, allowing for flexible control voltages.

The forward voltage for this MOSFET is 1.5 V, which is relevant for its operation in circuits.

Yes, it complies with RoHS environmental safety standards, ensuring it meets modern regulatory requirements.

This model is ideal for industrial power electronics, motor control circuits, and power supplies requiring efficient high-voltage and high-current switching.

The country of origin for this model is India.

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