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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | R6030KNZ |
| Mount Type | Surface |
| Series | R6030KNZ |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PF |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 130mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 86W |
| Typical Gate Charge Qg @ Vgs | 56nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
The ROHM R6030KNZ is a power N-Channel MOSFET optimized for switching applications where high current and voltage handling is required. It supports a continuous drain current of up to 30 A and can withstand drain-source voltages as high as 600 V.
Housed in a TO-3PF package with surface mount configuration and 3 pins, this MOSFET provides robust mechanical and electrical reliability in compact PCB designs. It delivers efficient operation due to its low on-resistance of 130 mΩ combined with a typical gate charge of 56 nC, allowing for fast switching speed and low power loss.
The device operates reliably over a wide temperature range from -55°C to 150°C, suitable for demanding industrial, automotive (though no automotive standard certification), and power management applications. Its maximum power dissipation rating of 86 W allows effective handling of thermal loads during high power operation.
Additional features include a forward voltage of 1.5 V and a maximum gate-source voltage rating of 30 V. The device comes with lead-free plating and complies with RoHS environmental safety standards, ensuring it meets modern regulatory requirements.
Supports a maximum continuous drain current of 30 A ensuring robust performance. 600 V maximum drain-source voltage suitable for high-voltage circuits. High power dissipation capacity of 86 W for effective heat management.
TO-3PF package with surface mount type and 3 pins for reliable installation. Low on-resistance of 130 mΩ contributing to efficient switching. Fast switching speed and fast reverse recovery time for improved circuit efficiency.
Typical gate charge of 56 nC ensures low gate drive power. Wide operating temperature range from -55°C to 150°C for industrial applications. Maximum gate-source voltage of ±30 V allowing flexible control voltages. Lead-free plating and RoHS compliant guaranteeing environmental safety.
This Power MOSFET is ideal for industrial power electronics, motor control circuits, power supplies, and other systems requiring efficient high-voltage and high-current switching. Explore more power semiconductors and discrete devices within EnvMart's robust electronics category for industrial and commercial applications.
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