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onsemi PowerTrench Type P-Channel MOSFET 2 A 20 V Enhancement 3-Pin SOT-23 FDN342P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | FDN342P |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 6.3nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 2 A provides reliable performance.
- Maximum drain-source voltage rating of 20 V ensures suitability for low voltage applications.
- PowerTrench series delivers high efficiency with low on-resistance at 80 mΩ.
- Enhancement mode channel control enables precision switching.
- Compact SOT-23 package enables space-saving PCB designs.
- Operational temperature range from -55°C to 150°C supports robust industrial use.
- Maximum power dissipation rated at 500 mW for efficient heat management.
- Typical gate charge of 6.3 nC facilitates fast switching performance.
Product Description
onsemi FDN342P PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor optimized for efficient switching applications. Designed with PowerTrench technology, this device features a shielded-gate structure that enhances charge balance, yielding a significantly lower figure of merit compared to earlier generations.
The 2 Amp maximum continuous drain current and 20 Volt maximum drain-source voltage provide reliable operation within low-voltage switching circuits. Its enhancement mode channel supports precise control, ideal for synchronous rectification and other power management functions.
The device is housed in a compact 3-Pin SOT-23 surface mount package, measuring 2.92 mm in length, 1.4 mm in width, and 940 μm in height, enabling high-density PCB layouts without compromising thermal performance.
Characteristic features of the FDN342P include a low maximum drain-source resistance of 80 milliohms, a maximum power dissipation of 500 milliwatts, and a typical gate charge of 6.3 nanocoulombs, allowing for rapid switching and minimal losses. The maximum gate-source voltage tolerates ±12 volts, ensuring protection against voltage surges.
Operating temperature spans from −55 to 150 degrees Celsius, making it suitable for demanding industrial and automotive environments where thermal stability is critical. The device's soft body diode performance effectively eliminates the need for additional snubber circuits, improving system efficiency.
Maximum continuous drain current of 2 Amperes. Rated for a maximum drain-source voltage of 20 Volts. PowerTrench series offers enhanced power density and efficiency. Small gate charge enables fast switching suitable for power supplies.
Compact SOT-23 package supports surface mounting on high-density PCBs. Wide operational temperature range from -55°C to 150°C. Maximum power dissipation at 500 milliwatts. Maximum gate-source voltage of ±12 Volts. Device dimensions: 2.92 mm length, 1.4 mm width, 940 μm height.
This PowerTrench P-Channel MOSFET is ideal for industrial, electronic component manufacturing, power management, and HVAC applications requiring robust, efficient low-voltage switching elements. Its surface mount configuration and compact size also make it favorable for consumer electronics and automotive electronics designs.
Explore similar power semiconductor components in the Power MOSFET category to find complementary devices for your application needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 2 Amperes.
It has a maximum drain-source voltage rating of 20 Volts, making it suitable for low voltage applications.
The maximum drain-source resistance is 80 milliohms, which contributes to its efficiency in switching applications.
The typical gate charge is 6.3 nanocoulombs, facilitating fast switching performance.
The operational temperature range spans from -55°C to 150°C, supporting robust industrial use.
This model has dimensions of 2.92 mm in length, 1.4 mm in width, and 940 μm in height.
It is housed in a compact 3-Pin SOT-23 surface mount package, suitable for high-density PCB designs.
The maximum power dissipation for this model is rated at 500 milliwatts, allowing for efficient heat management.
The maximum gate-source voltage tolerates ±12 volts, providing protection against voltage surges.
This device features a P-Channel type, which is suitable for various switching applications.
It is suitable for industrial, electronic component manufacturing, power management, and HVAC applications requiring efficient low-voltage switching.
This model is part of the PowerTrench series, which is optimized for enhanced power density and efficiency.
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