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Infineon N-Channel Enhancement MOSFET 120 A, 40 V, 8-Pin TO-263 IAUT300N08S5N014ATMA1

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Infineon N-Channel Enhancement MOSFET 120 A, 40 V, 8-Pin TO-263 IAUT300N08S5N014ATMA1

Name: Infineon N-Channel Enhancement MOSFET 120 A, 40 V, 8-Pin TO-263 IAUT300N08S5N014ATMA1
Brand: Infineon
SKU: 406127
Price: 6.73 USD
Availability: InStock

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Category Power MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Model	IAUT300N08S5N014ATMA1
Mount Type	Surface
Series	IAUT
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	120A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	1.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Typical Gate Charge Qg @ Vgs	80nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.1V

Key Features

Designed specifically for automotive applications with AEC-Q101 qualification.
Features low on-resistance of 1.4 milliohms to minimize power loss.
Supports high maximum power dissipation of 81 watts for efficient heat management.
Operates reliably across a wide temperature range from -55°C to 175°C.
Enhancement mode channel with typical gate charge of 80 nanocoulombs at 8 V gate-source voltage.
Offers maximum gate-source voltage of ±20 volts for robust switching.
Packaged as a surface-mount device in TO-263 for easy PCB mounting.
Complies with RoHS environmental standards for sustainability.

Product Description

Infineon IAUT300N08S5N014ATMA1 is an N-Channel Enhancement Mode MOSFET designed for demanding automotive and industrial applications. It features a high continuous drain current rating of 120 A and a maximum drain-source voltage of 40 V, making it suitable for power switching and control applications requiring efficiency and reliability.

This device utilizes Infineon’s latest cellular planar HEXFET technology to achieve a low on-resistance of 1.4 milliohms, significantly reducing conduction losses and heat generation in circuits. The package type is an 8-pin TO-263 surface mount, allowing compact and reliable installation on PCBs.

With a maximum power dissipation of 81 watts and robust operating temperature tolerance from -55°C to +175°C, this MOSFET maintains stable performance even in harsh automotive environments. The typical gate charge of 80 nanocoulombs at an 8 V gate-source voltage supports fast switching characteristics, while the allowed gate-source voltage of ±20 V ensures durable operation.

The product is AEC-Q101 qualified, confirming its suitability for automotive systems that demand high reliability and quality standards. Additionally, it complies with RoHS directives, ensuring environmentally friendly manufacturing and disposal.

Infineon’s IAUT300N08S5N014ATMA1 is ideal for use in automotive electronics, industrial motor controls, power management systems, and other applications where high current, low losses, and thermal stability are critical.

Designed specifically for automotive applications with AEC-Q101 qualification. Features low on-resistance of 1.4 milliohms to minimize power loss. Supports high maximum power dissipation of 81 watts for efficient heat management.

Operates reliably across a wide temperature range from -55°C to 175°C. Enhancement mode channel with typical gate charge of 80 nanocoulombs at 8 V gate-source voltage. Offers maximum gate-source voltage of ±20 volts for robust switching.

Packaged as a surface-mount device in TO-263 for easy PCB mounting. Complies with RoHS environmental standards for sustainability. Explore a wide range of semiconductors and Power MOSFETs at EnvMart for industrial, automotive, and electronic design needs.