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DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 580 mA, 60 V Enhancement, 6-Pin SOT-26 DMN601DMK-7

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.3mm
Length 3.1mm
Model DMN601DMK-7
Width 1.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-26
Minimum Operating Temperature -55°C
Standards/Approvals J-STD-020, MIL-STD-202, RoHS, AEC-Q101, UL 94V-0
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q200, AEC-Q101, AEC-Q100
Channel Type Type N
Maximum Continuous Drain Current Id 580mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 4Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 980mW
Typical Gate Charge Qg @ Vgs 304nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 0.8V
Transistor Configuration Isolated

Key Features

  • Dual N-Channel MOSFET configuration with isolated transistor design.
  • Compact 6-pin SOT-26 surface mount package ideal for PCB assembly.
  • Maximum power dissipation of 980 mW ensures reliable operation.
  • Wide operating temperature range from -55°C to 150°C.
  • Low typical gate charge of 304 nC at gate-source voltage for efficient switching.
  • Designed to meet automotive standards AEC-Q200, AEC-Q101, and AEC-Q100.
  • Complies with J-STD-020, MIL-STD-202, RoHS, and UL 94V-0 approvals.
  • Small form factor with dimensions 3.1 mm length, 1.7 mm width, and height 1.3 mm.

Product Description

DiodesZetex DMN601DMK-7 is an isolated 2 type N-channel Power MOSFET designed for high efficiency and reliability in electronic circuits. It features a dual isolated transistor configuration and operates with a maximum continuous drain current of 580 mA and a drain-source voltage rating of 60 V, suitable for power management and switching applications.

The device is housed in a compact 6-pin SOT-26 surface mount package, making it ideal for space-constrained PCB designs in automotive and industrial electronic assemblies. Its low typical forward voltage of 0.8 V and gate charge of 304 nC at Vgs enable efficient switching with minimal loss.

Robust in performance, the MOSFET can dissipate up to 980 mW and withstand operating temperatures ranging from -55°C to 150°C, ensuring stability across harsh environments. The product complies with key standards like J-STD-020, MIL-STD-202, RoHS directives, AEC-Q101 automotive qualification, and UL 94V-0 flame retardant rating, making it suitable for automotive and industrial applications.

Physical dimensions are compact at 3.1 mm length, 1.7 mm width, and 1.3 mm height, facilitating dense PCB layouts. The package contains two elements per chip, and the transistor is in enhancement mode with maximum gate-source voltage tolerance of 20 V and a maximum drain-source resistance of 4 Ω.

This component is ideal for use in automotive electronics, power control circuits, and other semiconductor applications requiring efficient, reliable N-channel MOSFET transistors. Dual isolated N-channel MOSFET suitable for power applications.

Compact 6-pin SOT-26 surface mount package for easy PCB integration. Supports drain current up to 580 mA and voltage up to 60 V. Wide temperature operation from -55°C to 150°C ensures reliability in extreme conditions. Complies with automotive standards and industry certifications for quality assurance.

Low gate charge enhances switching performance and reduces power loss. Compact dimensions allow for space-saving designs in electronic assemblies. Meets rigorous quality and safety standards including RoHS and UL 94V-0. Explore comprehensive solutions in semiconductor components at EnvMart.

DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 580 mA, 60 V Enhancement, 6-Pin SOT-26 DMN601DMK-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 580 mA.

The maximum drain-source voltage rating is 60 V.

The dimensions of the SOT-26 package are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.

The operating temperature range is from -55°C to 150°C.

The typical gate charge at gate-source voltage is 304 nC.

The maximum power dissipation capability is 980 mW.

It complies with J-STD-020, MIL-STD-202, RoHS, AEC-Q101, and UL 94V-0 standards.

There are 2 elements per chip in this model.

The maximum gate-source voltage tolerance is 20 V.

This model uses a dual isolated N-channel transistor configuration.

The maximum drain-source resistance is 4 Ω.

The mounting type for this model is surface mount.

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