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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | DMN601DMK-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-26 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, AEC-Q101, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q200, AEC-Q101, AEC-Q100 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 580mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 980mW |
| Typical Gate Charge Qg @ Vgs | 304nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
DiodesZetex DMN601DMK-7 is an isolated 2 type N-channel Power MOSFET designed for high efficiency and reliability in electronic circuits. It features a dual isolated transistor configuration and operates with a maximum continuous drain current of 580 mA and a drain-source voltage rating of 60 V, suitable for power management and switching applications.
The device is housed in a compact 6-pin SOT-26 surface mount package, making it ideal for space-constrained PCB designs in automotive and industrial electronic assemblies. Its low typical forward voltage of 0.8 V and gate charge of 304 nC at Vgs enable efficient switching with minimal loss.
Robust in performance, the MOSFET can dissipate up to 980 mW and withstand operating temperatures ranging from -55°C to 150°C, ensuring stability across harsh environments. The product complies with key standards like J-STD-020, MIL-STD-202, RoHS directives, AEC-Q101 automotive qualification, and UL 94V-0 flame retardant rating, making it suitable for automotive and industrial applications.
Physical dimensions are compact at 3.1 mm length, 1.7 mm width, and 1.3 mm height, facilitating dense PCB layouts. The package contains two elements per chip, and the transistor is in enhancement mode with maximum gate-source voltage tolerance of 20 V and a maximum drain-source resistance of 4 Ω.
This component is ideal for use in automotive electronics, power control circuits, and other semiconductor applications requiring efficient, reliable N-channel MOSFET transistors. Dual isolated N-channel MOSFET suitable for power applications.
Compact 6-pin SOT-26 surface mount package for easy PCB integration. Supports drain current up to 580 mA and voltage up to 60 V. Wide temperature operation from -55°C to 150°C ensures reliability in extreme conditions. Complies with automotive standards and industry certifications for quality assurance.
Low gate charge enhances switching performance and reduces power loss. Compact dimensions allow for space-saving designs in electronic assemblies. Meets rigorous quality and safety standards including RoHS and UL 94V-0. Explore comprehensive solutions in semiconductor components at EnvMart.
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