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STMicroelectronics MDmesh M2 N-channel MOSFET 10A 650V Enhancement Mode 3-Pin TO-252 STD13N65M2
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD13N65M2 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M2 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 430mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 110W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- High voltage enhancement mode MOSFET.
- Maximum continuous drain current of 10 amperes.
- 650 volts maximum drain-source voltage rating.
- Low gate charge ensuring efficient switching.
- Compact surface-mount TO-252 package with 3 pins.
- Maximum power dissipation rating of 110 watts.
- Operating temperature range from -55°C to 150°C.
- Typical forward voltage of 1.6 volts.
Product Description
STMicroelectronics STD13N65M2 is a high-voltage N-channel MDmesh™ M2 series MOSFET designed for robust power applications, delivering a maximum continuous drain current of 10 amperes and a drain-source voltage of 650 volts. Packaged in a 3-pin TO-252 surface-mount package, it provides excellent switching characteristics with a typical gate charge of 17 nanocoulombs, suitable for resonant-type switching power supplies such as LLC converters.
This enhancement mode MOSFET features a maximum drain-source resistance of 430 milliohms, a maximum power dissipation of 110 watts, and operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding industrial and electronic circuit applications.
The device's compact dimensions of length 6.6 mm, width 6.2 mm, and height 2.4 mm facilitate high-density mounting on printed circuit boards. The maximum gate-source voltage is rated at ±25 volts, and the typical forward voltage is 1.6 volts, ensuring efficient power handling.
STMicroelectronics MDmesh M2 series MOSFETs are engineered for power management in industrial, automotive, renewable energy, and consumer electronics sectors, offering enhanced performance and reliability.
High voltage enhancement mode MOSFET. Maximum continuous drain current of 10 amperes. 650 volts maximum drain-source voltage rating. Low gate charge ensuring efficient switching. Compact surface-mount TO-252 package with 3 pins.
Maximum power dissipation rating of 110 watts. Operating temperature range from -55°C to 150°C. Typical forward voltage of 1.6 volts. Maximum drain-source resistance of 430 milliohms. Manufactured in China with MDmesh M2 series technology.
This MOSFET is ideal for power switching, power supply design, and electronic component manufacturing applications. Explore the Electronics & Electricals section on EnvMart for more innovative semiconductor components by STMicroelectronics and other leading brands.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10 amperes.
It has a maximum drain-source voltage rating of 650 volts.
This model is packaged in a 3-pin TO-252 surface-mount package.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation rating is 110 watts.
The typical gate charge is 17 nanocoulombs.
The typical forward voltage is 1.6 volts.
The maximum drain-source resistance is 430 milliohms.
The dimensions are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The maximum gate-source voltage is rated at ±25 volts.
This model is suitable for power switching, power supply design, and electronic component manufacturing applications.
It features an N-channel type configuration.
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