Infineon CoolMOS CP N-Channel MOSFET, 31 A, 650 V Enhancement Mode, 3-Pin TO-247 IPW60R099CPFKSA1

Infineon IPW60R099CPFKSA1 is a high-performance CoolMOS CP Power MOSFET designed for power electronics applications requiring high efficiency and thermal management. This N-Channel MOSFET is housed in a 3-pin TO-247 package, providing through-hole mounting suitable for industrial and commercial electronic circuits.

Rated for a maximum continuous drain current of 31 A and a drain-source voltage of 650 V, it enables robust performance in power switching and amplification tasks. The device features an enhancement mode operation for reliable device switching and a low drain-source on-resistance of 99 mΩ to minimize power losses during conduction.

With a maximum power dissipation rating of 255 W and an operating temperature range from -55°C to 150°C, the MOSFET is suitable for demanding environments in industrial, automotive, and power management applications.

Typical gate charge at 14 nC allows for efficient switching speeds, and the device tolerates gate-source voltages of -20 V to +20 V, protecting against transient voltages. The mechanical dimensions are 21.1 mm height, 16.13 mm length, and 5.21 mm width, fitting standard designs.

Maximum continuous drain current of 31 A. Maximum drain-source voltage of 650 V. Low drain-source resistance of 99 mΩ. High power dissipation capacity of 255 W. Wide operating temperature from -55°C to 150°C. Typical gate charge is 14 nC at Vgs.

Gate-source voltage tolerance of ±20 V. Forward voltage of 1.2 V. Packaged in TO-247, 3-pin through-hole. This MOSFET is ideal for industrial power conversion, motor control, and general-purpose switching applications requiring reliability and efficiency.

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