onsemi PowerTrench N-Channel MOSFET, 42 A, 40 V Enhancement Mode, 3-Pin TO-252 Package FDD8647L

onsemi FDD8647L PowerTrench N-Channel MOSFET is a high-performance enhancement mode transistor designed for efficient switching and power management in electronic circuits. Rated for a continuous drain current of 42 amperes and a maximum drain-source voltage of 40 volts, it is suitable for various industrial and commercial applications requiring robust and reliable semiconductor components.

This device features a low maximum drain-source resistance of 9 milliohms, which minimizes conduction losses and improves overall efficiency. The maximum power dissipation rating of 43 watts allows it to handle significant thermal loads, operating effectively across a wide temperature range from -55°C up to 150°C.

The MOSFET is packaged in a 3-pin TO-252 surface mount package, offering compact dimensions (6.73 mm length, 6.22 mm width, 2.39 mm height) that suit high-density PCB layouts. Its typical gate charge of 20 nanocoulombs enables fast switching times, which is critical for power conversion and motor control applications.

Additional features such as a forward voltage of 1.2 volts optimize the device's conduction efficiency, contributing to lower energy consumption and heat generation. The product is RoHS compliant, meeting environmental standards for electronic components.

The onsemi PowerTrench series MOSFETs are widely used in industrial power supplies, automotive electronics, consumer electronic devices, and other applications where high current handling and low power loss are essential. This device supports surface mount technology, facilitating automated assembly and integration into modern electronic manufacturing processes.

Choose the onsemi FDD8647L MOSFET for effective power management and reliable performance in demanding electronic environments. Explore more semiconductor components and electronic parts at EnvMart.

Maximum continuous drain current of 42 amperes supports high current loads. Maximum drain-source voltage of 40 volts ensures efficient switching. Low maximum drain-source resistance of 9 milliohms reduces power losses. Robust power dissipation capacity of 43 watts for reliable performance.

Wide operating temperature range from -55°C to 150°C. Typical gate charge of 20 nanocoulombs allows fast switching speeds. Compact dimensions with length 6.73 mm, width 6.22 mm, and height 2.39 mm. Forward voltage of 1.2 volts optimizing conduction efficiency.

RoHS compliant construction ensures environmental safety. Designed for surface mount with 3-pin TO-252 package format. Discover a complete range of Power MOSFETs and discrete semiconductors in the EnvMart Electronics category.