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STMicroelectronics MDmesh M2 N-Channel MOSFET, 3.5 A Continuous Drain Current, 650 V Drain Source Voltage STP5N60M2

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STMicroelectronics MDmesh M2 N-Channel MOSFET, 3.5 A Continuous Drain Current, 650 V Drain Source Voltage STP5N60M2

Name: STMicroelectronics MDmesh M2 N-Channel MOSFET, 3.5 A Continuous Drain Current, 650 V Drain Source Voltage STP5N60M2
Brand: STMicroelectronics
SKU: 379632
Price: 1.46 USD
Availability: InStock

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Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	15.75mm
Length	10.4mm
Model	STP5N60M2
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh M2
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	3.5A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	1.4Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	45W
Typical Gate Charge Qg @ Vgs	8.5nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.6V

Key Features

Operates at a maximum continuous drain current of 3.5 A ensuring reliable high-load operation.
Supports a maximum drain-source voltage of 650 V suitable for high-voltage applications.
Packaged in a 3-pin TO-220 form factor for easy through-hole mounting.
Features an enhancement-mode N-channel MOSFET architecture ideal for switching applications.
Has a low typical gate charge of 8.5 nC for efficient switching performance.
Maximum power dissipation rating of 45 W allows for handling moderate power levels.
Operates within a temperature range from -55 °C to 150 °C ensuring durability under harsh conditions.
Has a maximum drain-source resistance of 1.4 ohms contributing to low conduction losses.

Product Description

STMicroelectronics STP5N60M2 is a N-channel MDmesh™ M2 series MOSFET designed for semiconductor applications requiring efficient switching and high voltage endurance. It supports a continuous drain current of 3.5 A and a maximum drain-source voltage of 650 V, making it suitable for power management circuits including resonant-type switching supplies such as LLC converters.

This device features an enhancement-mode channel delivering reliable switching with a maximum drain-source resistance of 1.4 Ω and a typical gate charge of 8.5 nC at specified gate-source voltage. Encapsulated in a TO-220 3-pin package, it allows easy through-hole mounting on printed circuit boards.

The MOSFET operates effectively over a broad temperature range from -55 °C to 150 °C, enhanced by a maximum power dissipation capability of 45 W. Its forward voltage rating is 1.6 V with a maximum gate-source voltage of -25 to +25 V, providing robustness in power circuits.

This semiconductor component does not carry automotive system certification but adheres to industry standards for discrete semiconductors. Its dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width enable compact integration into industrial, laboratory, manufacturing, and electronics assembly applications.

Operates with low gate charge enhancing efficient switching in power electronics. Robust construction suited for demanding electrical environments. TO-220 packaging supports heat dissipation and easy installation. Wide operating temperature range supports industrial and commercial use cases.

Ideal for use in resonant switching supplies such as LLC converters.

This STMicroelectronics MDmesh M2 MOSFET STP5N60M2 is suitable for electronic component catalogs and power semiconductor selections in engineering and manufacturing environments. Explore similar MOSFETs and power components in the Electronics section at EnvMart for competitive and reliable solutions.

Explore more products in our Power MOSFET category.