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STMicroelectronics N-Channel MDmesh™ M2 MOSFET 68 A, 600 V Enhancement, 3-Pin TO-247 STW70N60M2

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STMicroelectronics N-Channel MDmesh™ M2 MOSFET 68 A, 600 V Enhancement, 3-Pin TO-247 STW70N60M2

Name: STMicroelectronics N-Channel MDmesh™ M2 MOSFET 68 A, 600 V Enhancement, 3-Pin TO-247 STW70N60M2
Brand: STMicroelectronics
SKU: 388827
Price: 14.7 USD
Availability: InStock

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Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	5.15mm
Length	15.75mm
Model	STW70N60M2
Width	20.15mm
Mount Type	Through Hole
Series	MDmesh M2
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	68A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	40mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	450W
Typical Gate Charge Qg @ Vgs	118nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	0.98V

Key Features

Maximum continuous drain current of 68 A ensures high power handling.
600 V drain-source voltage rated for demanding industrial applications.
TO-247 package with 3 pins suitable for through-hole mounting.
Enhancement channel mode for improved switching efficiency.
Low gate charge of 118 nC enables faster switching and reduced losses.
Maximum power dissipation of 450 W supports robust operation.
Wide operating temperature range from -55°C to 150°C for reliability.
Forward voltage of 0.98 V improves conduction performance.

Product Description

STMicroelectronics STW70N60M2 N-Channel MDmesh M2 MOSFET is a high-voltage, high-current power transistor designed for efficient switching and power management in industrial and electronic applications. It features a maximum continuous drain current of 68 A and a drain-source voltage rating of 600 V, enabling reliable operation in power converters, resonant-type switching supplies like LLC converters, and other demanding environments.

The device utilizes an enhancement channel mode, making it highly efficient for switching operations. Its low gate charge of 118 nC allows for faster switching speeds and reduced power loss, enhancing overall circuit efficiency. The MOSFET comes in a robust 3-pin TO-247 through-hole package, suitable for easy mounting on printed circuit boards and mechanical stability during operation.

With a maximum power dissipation of 450 W and a wide operating temperature range from -55°C to 150°C, this MOSFET delivers reliable performance under thermal stress and harsh conditions. Its forward voltage of 0.98 V ensures low conduction losses, improving power efficiency. The compact physical dimensions (15.75 mm length, 20.15 mm width, and 5.15 mm height) aid in high-density PCB designs and reduce space requirements.

This product is ideal for use in industrial equipment, power supplies, automotive electronics, and commercial power management systems. Its absence of automotive standards and approvals should be considered when designing for automotive-specific applications.

Maximum continuous drain current of 68 A. 600 V max drain-source voltage. Enhancement channel mode for efficient switching. Low gate charge of 118 nC for fast response. 450 W maximum power dissipation. Temperature range from -55°C to 150°C.

TO-247, 3-pin through-hole package. Compact size: 15.75 x 20.15 x 5.15 mm. Explore the vast range of power semiconductors and MOSFETs at EnvMart suitable for your industrial, electronic, and power conversion needs.

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