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onsemi SuperFET II N-Channel MOSFET, 37 A Continuous Drain Current, 600 V Maximum Drain-Source Voltage FCP104N60F

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onsemi SuperFET II N-Channel MOSFET, 37 A Continuous Drain Current, 600 V Maximum Drain-Source Voltage FCP104N60F

Name: onsemi SuperFET II N-Channel MOSFET, 37 A Continuous Drain Current, 600 V Maximum Drain-Source Voltage FCP104N60F
Brand: onsemi
SKU: 382675
Price: 4.9 USD
Availability: InStock

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Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	15.215mm
Length	10.36mm
Model	FCP104N60F
Width	4.672mm
Mount Type	Through Hole
Series	SuperFET II
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS Compliant
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	37A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	104mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	357W
Typical Gate Charge Qg @ Vgs	110nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.2V

Key Features

Designed using advanced Super Junction Technology for high efficiency.
Features low Rds(on) of 104mΩ to minimize power loss.
Supports through hole mounting with 3 pins for easy installation.
Maximum power dissipation rating of 357 W ensures reliable performance.
Wide operating temperature range from -55°C to 150°C enhances durability.
Typical gate charge of 110 nC enables fast switching applications.
Compliant with RoHS environmental standards.
Suitable for use in power supply, industrial, and telecommunication applications.

Product Description

onsemi FCP104N60F is a SuperFET II N-Channel MOSFET designed for high power applications requiring efficiency and reliability. It delivers a maximum continuous drain current of 37 A and can withstand a maximum drain-source voltage of 600 V. Packaged in a 3-pin TO-220 through-hole design, this MOSFET facilitates robust mounting and excellent thermal performance.

This MOSFET utilizes advanced Super Junction Technology, resulting in low on-resistance (104 mΩ) that reduces conduction losses, enhancing system efficiency. The device supports a maximum power dissipation of 357 W, making it suitable for demanding industrial environments and power management applications.

Its typical gate charge of 110 nC allows for rapid switching, making it ideal for AC-DC switch mode power supplies, telecom servers, UPS systems, and solar inverters. The device operates reliably in extreme temperatures, from -55°C to 150°C, ensuring durability in harsh conditions.

The enhancement mode channel and a forward voltage of approximately 1.2 V optimize switching behavior and conduction efficiency. The device also complies with RoHS standards, ensuring environmentally safe manufacturing and disposal.

Ideal industrial and commercial applications include power supplies, industrial automation, telecommunications, and solar power systems where high voltage and current handling combined with high efficiency and reliability are critical.

Designed using advanced Super Junction Technology for high efficiency. Features low Rds(on) of 104mΩ to minimize power loss. Supports through hole mounting with 3 pins for easy installation. Maximum power dissipation rating of 357 W ensures reliable performance.

Wide operating temperature range from -55°C to 150°C enhances durability. Typical gate charge of 110 nC enables fast switching applications. Compliant with RoHS environmental standards. Suitable for use in power supply, industrial, and telecommunication applications.

Enhancement mode channel with forward voltage around 1.2 V for efficient conduction. Browse EnvMart’s comprehensive selection of Power MOSFETs and semiconductor devices to find compatible components for your industrial and electronic needs.