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DiodesZetex N-Channel Enhancement Mode MOSFET, 40 V, 39 A, 3-Pin TO-252 Package DMN4010LK3-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.39mm |
| Length | 6.7mm |
| Model | DMN4010LK3-13 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | DMN4010LK3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 14.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.72V |
Key Features
- Provided in a compact 3-pin TO-252 surface mount package.
- Maximum continuous drain current of 39 A for medium-power applications.
- Low maximum drain-source resistance of 14.5 milliohms for efficient conduction.
- Operates within a temperature range of -55°C to 150°C.
- Typical gate charge of 37 nanocoulombs at a gate-source voltage of 7 V.
- Complies with automotive standard AEC-Q101 for reliability.
- Maximum gate-source voltage rating of ±20 V for flexible switching.
- Forward voltage of 0.72 V for optimized device operation.
Product Description
DiodesZetex DMN4010LK3-13 is a high-performance N-Channel Enhancement Mode MOSFET designed for robust power management in electronics.
With a maximum continuous drain current rating of 39 A and a maximum drain-source voltage of 40 V, this device is ideal for medium-power applications in automotive, industrial, and consumer electronics sectors.
The MOSFET's low on-resistance of 14.5 milliohms ensures efficient operation and low conduction losses, enhancing overall energy efficiency. Encapsulated within a 3-pin TO-252 package optimized for surface mount technology, it supports compact designs and easy integration on printed circuit boards.
Operating temperature ranges from -55°C to 150°C allow it to function reliably in harsh environments. The device includes a typical gate charge of 37 nanocoulombs and supports a maximum gate-source voltage of ±20 V, providing flexibility and control for switching applications.
The MOSFET meets the AEC-Q101 automotive quality standard, making it suitable for demanding automotive electronics. Compact physical dimensions (6.7 mm × 6.2 mm × 2.39 mm) enable use in space-restricted applications. This MOSFET is widely used in industrial power management, automotive controls, power supplies, and other electronic devices requiring efficient and reliable switching.
Explore the Electronics & Electricals category on EnvMart for more semiconductor components and MOSFET devices from DiodesZetex and other leading manufacturers.
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Frequently Asked Questions
The maximum continuous drain current of this model is 39 A, making it suitable for medium-power applications.
The maximum drain-source voltage for the DMN4010LK3-13 is 40 V.
It has a maximum drain-source resistance of 14.5 milliohms, which ensures efficient conduction.
This model operates within a temperature range of -55°C to 150°C.
The typical gate charge is 37 nanocoulombs at a gate-source voltage of 7 V.
It is provided in a compact 3-pin TO-252 surface mount package.
Yes, it complies with the AEC-Q101 automotive standard for reliability.
The physical dimensions are 6.7 mm in length, 6.2 mm in width, and 2.39 mm in height.
The maximum gate-source voltage rating is ±20 V, allowing for flexible switching.
The forward voltage is 0.72 V, which is optimized for device operation.
This model is widely used in industrial power management, automotive controls, power supplies, and other electronic devices requiring efficient switching.
The maximum power dissipation for the DMN4010LK3-13 is 1.6 W.
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