Nexperia N-Channel MOSFET, 335 mA, 55 V Enhancement, 3-Pin SOT-23 Package BSH111BKR

The Nexperia BSH111BKR is an N-Channel MOSFET designed for surface mount technology (SMT) applications in electronic components, power devices, and semiconductor circuits. It features an enhancement mode Field Effect Transistor (FET) with low threshold voltage and utilizes trench MOSFET technology to achieve fast switching and efficient performance.

This MOSFET is housed in a small SOT-23 (TO-236AB) package with 3 pins, making it suitable for compact and power-sensitive applications. The device supports a maximum continuous drain current of 335 mA and a drain-source voltage of 55 V, with a maximum power dissipation of 1.45 W, ensuring reliable operation under demanding conditions.

Operating temperatures range from -55°C to 150°C, enabling use in automotive and industrial environments. The maximum gate-source voltage is 10 V, and it offers low typical gate charge measured at 0.5 nC at the gate threshold voltage, facilitating minimal power loss during switching.

The MOSFET offers ElectroStatic Discharge (ESD) protection greater than 3 kV Human Body Model (HBM), ensuring device durability against electrostatic damage. Applications include relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits in consumer electronics, industrial, automotive, and power management systems.

The Trench MOSFET technology provides low on-resistance and fast switching capability. Its small footprint supports space-critical PCB layouts and surface mount manufacturing processes. The device's robust electrical characteristics make it ideal for a variety of low power switching and amplification applications.

The broad operating temperature ensures stability in harsh environments including automotive electronics. Compact SOT-23 package dimensions: 3 mm length, 1.4 mm width, 1 mm height. Extensive use in industrial and electronic manufacturing due to reliability and performance.

Choose the Nexperia BSH111BKR MOSFET for dependable, high-performance switching in power-critical, space-limited electronic applications. The device is compliant with industry standards and manufactured in China.

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