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Wolfspeed N-Channel MOSFET, 30 A, 1200 V, Enhancement Mode, 7-Pin TO-263 Package C3M0075120J

Category MOSFET Brand Wolfspeed Condition New

Specifications

Country of Origin India
Brand Wolfspeed
Height 4.57mm
Length 10.23mm
Model C3M0075120J
Width 9.12mm
Mount Type Surface
Series C3M
Maximum Operating Temperature 150°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 7
Channel Type N
Maximum Continuous Drain Current Id 30A
Maximum Drain Source Voltage Vds 1.2kV
Maximum Drain Source Resistance Rds 75mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 113.6W
Typical Gate Charge Qg @ Vgs 48nC
Maximum Gate Source Voltage Vgs -8, 19V
Forward Voltage Vf 4.5V

Key Features

  • Operates with enhancement mode channel for improved switching.
  • Maximum continuous drain current of 30 amperes.
  • Rated drain-source voltage of 1200 volts for high-voltage applications.
  • Low on-resistance with Rds(on) of 75 milliohms for efficient conduction.
  • High maximum power dissipation of 113.6 watts enabling robust thermal handling.
  • Compact 7-pin TO-263 surface mount package for easy PCB integration.
  • Wide operating temperature range from -55°C up to 150°C.
  • Typical gate charge of 48 nanocoulombs ensures fast switching performance.

Product Description

Wolfspeed C3M0075120J is a high-performance, N-Channel Enhancement Mode MOSFET designed to deliver outstanding efficiency and reliability in power electronics applications. The 7-pin TO-263 surface mount package combines low inductance with high voltage and current handling capabilities, making it ideal for industrial, automotive, and renewable energy systems.

This device supports a maximum continuous drain current of 30 A and a drain-source voltage of 1200 V, providing excellent performance in high voltage DC-DC converters, motor drives, and power factor correction circuits. Its low Rds(on) of 75 milliohms reduces conduction losses, while a typical gate charge of 48 nC offers fast switching speed, critical for high-frequency applications.

Wolfspeed’s advanced SiC technology enables operation at elevated temperatures from -55°C to 150°C, enhancing durability in harsh environments. Its compact TO-263 package ensures easy mounting and effective heat dissipation during operation.

This MOSFET is optimized for use in industrial power supplies, electric vehicles, and renewable energy inverters, enabling designers to improve system efficiency and reduce component counts in two-level topologies.

The device’s robust design includes a maximum power dissipation of 113.6 W and supports a wide gate-source voltage range (-8 V to 19 V), making it simple to drive and parallelling multiple devices for higher power applications.

Operates with enhancement mode channel for improved switching. Maximum continuous drain current of 30 amperes. Rated drain-source voltage of 1200 volts for high-voltage applications. Low on-resistance with Rds(on) of 75 milliohms for efficient conduction.

High maximum power dissipation of 113.6 watts enabling robust thermal handling. Compact 7-pin TO-263 surface mount package for easy PCB integration. Wide operating temperature range from -55°C up to 150°C. Typical gate charge of 48 nanocoulombs ensures fast switching performance.

Maximum gate-source voltage tolerates -8 to 19 volts enhancing control flexibility. Physical dimensions: length 10.23 mm, width 9.12 mm, height 4.57 mm. Explore more Wolfspeed products and find complementary power semiconductors and modules to complete your system design at EnvMart.

Wolfspeed N-Channel MOSFET, 30 A, 1200 V, Enhancement Mode, 7-Pin TO-263 Package C3M0075120J
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Frequently Asked Questions

The maximum continuous drain current for this model is 30 A.

It has a rated drain-source voltage of 1200 V, making it suitable for high-voltage applications.

The on-resistance (Rds(on)) is 75 milliohms, which contributes to efficient conduction.

The typical gate charge is 48 nanocoulombs, ensuring fast switching performance.

The dimensions are 10.23 mm in length, 9.12 mm in width, and 4.57 mm in height.

It supports a maximum power dissipation of 113.6 watts, allowing for robust thermal handling.

The operating temperature range is from -55°C to 150°C, suitable for various environments.

It comes in a compact 7-pin TO-263 surface mount package, facilitating easy PCB integration.

This model features an N-channel type, which operates in enhancement mode for improved switching.

The maximum gate-source voltage tolerates between -8 V and 19 V, enhancing control flexibility.

It is optimized for use in industrial power supplies, electric vehicles, and renewable energy inverters.

This MOSFET has a pin count of 7, suitable for various mounting configurations.

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