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| Country of Origin | India |
|---|---|
| Brand | Wolfspeed |
| Height | 4.57mm |
| Length | 10.23mm |
| Model | C3M0075120J |
| Width | 9.12mm |
| Mount Type | Surface |
| Series | C3M |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 1.2kV |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 113.6W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | -8, 19V |
| Forward Voltage Vf | 4.5V |
Wolfspeed C3M0075120J is a high-performance, N-Channel Enhancement Mode MOSFET designed to deliver outstanding efficiency and reliability in power electronics applications. The 7-pin TO-263 surface mount package combines low inductance with high voltage and current handling capabilities, making it ideal for industrial, automotive, and renewable energy systems.
This device supports a maximum continuous drain current of 30 A and a drain-source voltage of 1200 V, providing excellent performance in high voltage DC-DC converters, motor drives, and power factor correction circuits. Its low Rds(on) of 75 milliohms reduces conduction losses, while a typical gate charge of 48 nC offers fast switching speed, critical for high-frequency applications.
Wolfspeed’s advanced SiC technology enables operation at elevated temperatures from -55°C to 150°C, enhancing durability in harsh environments. Its compact TO-263 package ensures easy mounting and effective heat dissipation during operation.
This MOSFET is optimized for use in industrial power supplies, electric vehicles, and renewable energy inverters, enabling designers to improve system efficiency and reduce component counts in two-level topologies.
The device’s robust design includes a maximum power dissipation of 113.6 W and supports a wide gate-source voltage range (-8 V to 19 V), making it simple to drive and parallelling multiple devices for higher power applications.
Operates with enhancement mode channel for improved switching. Maximum continuous drain current of 30 amperes. Rated drain-source voltage of 1200 volts for high-voltage applications. Low on-resistance with Rds(on) of 75 milliohms for efficient conduction.
High maximum power dissipation of 113.6 watts enabling robust thermal handling. Compact 7-pin TO-263 surface mount package for easy PCB integration. Wide operating temperature range from -55°C up to 150°C. Typical gate charge of 48 nanocoulombs ensures fast switching performance.
Maximum gate-source voltage tolerates -8 to 19 volts enhancing control flexibility. Physical dimensions: length 10.23 mm, width 9.12 mm, height 4.57 mm. Explore more Wolfspeed products and find complementary power semiconductors and modules to complete your system design at EnvMart.
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