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Infineon N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-252 IPD50N10S3L16ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPD50N10S3L16ATMA1 |
| Mount Type | Surface |
| Series | IPD |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Supports a maximum continuous drain current of 180 A.
- Operates at a maximum drain-source voltage of 100 V.
- Features a low maximum drain-source resistance of 0.7 milliohm for enhanced efficiency.
- Encapsulated in a TO-252 3-pin surface mount package.
- Capable of operating within a temperature range from -55°C to 175°C.
- Maximum gate-source voltage rating of 20 V ensures reliable control.
- Typical gate charge of 80 nC at specified voltages for fast switching.
- Maximum power dissipation rating of 81 W supports heavy-duty applications.
Product Description
The Infineon IPD50N10S3L16ATMA1 is an N-Channel Enhancement Mode MOSFET engineered for applications demanding high current capacity and robust thermal performance. Encased in a compact TO-252 package with three pins, it enables efficient surface mounting on printed circuit boards.
This MOSFET supports a maximum continuous drain current of 180 A and a drain-source voltage up to 100 V, making it suitable for power switching and load control in automotive and industrial systems. The device features a low on-resistance of 0.7 milliohms, minimizing power losses and improving overall circuit efficiency.
Designed for operation across broad temperature extremes from -55°C up to 175°C, this component ensures reliability under harsh environmental conditions. The gate threshold supports a maximum gate-source voltage of 20 V, with a typical gate charge of 80 nC facilitating swift turn-on and turn-off performance.
This MOSFET meets RoHS directives, confirming environmental compliance, and holds the AEC-Q101 automotive qualification, endorsing its suitability for automotive electronics with rigorous quality standards. Maximum power dissipation is rated at 81 W, enabling support for demanding power loads.
High current and voltage handling suitable for automotive and industrial applications. Surface mount TO-252 package optimizing board space. Low on-resistance ensures power efficiency and thermal management. Wide operating temperature range for reliability in extreme conditions.
Compliant with environmental and automotive quality standards.
This MOSFET is ideally deployed in automotive power stages, power supplies, motor drives, and other industrial power management circuits requiring efficient switching capabilities. Its design aligns well with modern compact electronics, ensuring durability and performance.
Explore further power transistor options and semiconductor components in EnvMart's comprehensive MOSFET category to find complementary electronic components for your design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 180 A.
It can operate at a maximum drain-source voltage of 100 V.
The maximum drain-source resistance is 0.7 milliohm, which enhances efficiency.
This MOSFET operates within a temperature range from -55°C to 175°C.
The maximum gate-source voltage rating is 20 V, ensuring reliable control.
The typical gate charge at specified voltages is 80 nC, facilitating fast switching.
It has a maximum power dissipation rating of 81 W, suitable for heavy-duty applications.
It is encapsulated in a TO-252 3-pin surface mount package.
This model meets the AEC-Q101 automotive qualification, ensuring suitability for automotive electronics.
Yes, it meets RoHS directives, confirming its environmental compliance.
It is ideally deployed in automotive power stages, power supplies, motor drives, and other industrial power management circuits.
This MOSFET has a pin count of 3.
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