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Microchip N-Channel Enhancement MOSFET 200 mA, 60 V, 3-Pin TO-92 Through Hole 2N7000-G
Specifications
| Country of Origin | Taiwan |
|---|---|
| Brand | Microchip |
| Height | 5.33mm |
| Length | 5.08mm |
| Model | 2N7000-G |
| Width | 4.06mm |
| Mount Type | Through Hole |
| Series | 2N7000 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 200mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 5.3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 850mV |
| Drivers | relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc |
Key Features
- Enhancement mode MOSFET suitable for power switching applications.
- Maximum continuous drain current of 200 mA ensures moderate load handling capability.
- Maximum drain-source voltage rated at 60 V for reliable operation.
- TO-92 through hole package with 3 pins for easy PCB mounting.
- Maximum power dissipation of 1 watt supports efficient thermal management.
- Operating temperature range from -55°C to 150°C for versatile use in varied environments.
- Low forward voltage of 850 mV enhances efficiency.
- High input impedance and excellent thermal stability improve circuit performance.
Product Description
Microchip 2N7000-G is an N-Channel Enhancement mode MOSFET designed for discrete semiconductor power switching tasks in industrial and electronic circuits. It supports a maximum continuous drain current of 200 mA and a drain-source voltage up to 60 V. This device is housed in a 3-pin TO-92 through-hole package, making it suitable for prototyping and low-volume production where ease of mounting is key.
The MOSFET utilizes a vertical DMOS structure delivering superior power handling with low thermal runaway risk and excellent stability over its wide operating temperature range of -55°C to 150°C. With a maximum gate-source voltage of 30 V and a low forward voltage drop of approximately 850 mV, it ensures efficient operation in amplifier circuits, motor controls, power supply circuits, and switching applications.
Its integral source-drain diode and low CISS capacitance contribute to fast switching speeds, low power drive requirements, and high input impedance. This improves performance in drivers for relays, solenoids, lamps, memories, displays, and bipolar transistors. The microchip MOSFET also provides excellent thermal stability and free operation from secondary breakdown, enhancing reliability in demanding industrial environments.
This device meets ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards, though no automotive certifications are applicable. Originating from Taiwan, it represents a trusted semiconductor choice for power switching roles in industrial, electronics assembly, and HVAC control systems.
Enhancement mode N-channel MOSFET with vertical DMOS silicon gate technology. Drain current rating of 200 mA and drain-source voltage up to 60 V. TO-92 package facilitating through-hole mounting and prototyping. Operating temperature extreme range from -55°C to 150°C.
Low Rds(on) of 5.3 ohms at gate voltage of 10 V. Integral body diode improves circuit protection and switching efficiency. Applications include amplifiers, converters, motor controls, drivers, and power supply circuits. Conforms to industry standards for electrostatic discharge protection and safety.
Explore more Microchip semiconductor devices and MOSFET products at EnvMart for reliable electronics manufacturing and maintenance solutions.
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Frequently Asked Questions
The maximum continuous drain current for the 2N7000-G MOSFET is 200 mA.
The maximum drain-source voltage rated for this model is 60 V.
The operating temperature range for this MOSFET is from -55°C to 150°C.
It comes in a TO-92 through-hole package with 3 pins, suitable for easy PCB mounting.
The forward voltage drop of the 2N7000-G is approximately 850 mV.
The maximum power dissipation for this model is 1 watt.
The maximum gate-source voltage for this MOSFET is 30 V.
This MOSFET is suitable for applications such as amplifiers, motor controls, power supply circuits, and drivers for relays and solenoids.
The channel type of this model is N-channel, designed for enhancement mode operation.
The dimensions of the 2N7000-G are approximately 5.33 mm in height, 5.08 mm in length, and 4.06 mm in width.
It conforms to ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards.
The maximum drain-source resistance for the 2N7000-G is 5.3 ohms at a gate voltage of 10 V.
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