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onsemi N-Channel MOSFET 116 A, 80 V Enhancement, Surface Mount PQFN 8-Pin Package FDMS4D5N08LC
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.05mm |
| Length | 5.85mm |
| Model | FDMS4D5N08LC |
| Width | 5mm |
| Mount Type | Surface |
| Series | FDMS |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 116A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 7.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 113.6W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Utilizes PowerTrench® process with Shielded Gate technology for low on-state resistance.
- Maximum continuous drain current of 116 amperes ensures high power capability.
- Low maximum drain-source resistance of 7.5 milliohms reduces conduction losses.
- Maximum power dissipation rating is 113.6 watts for reliable thermal performance.
- Typical gate charge of 51 nanocoulombs at Vgs = 5 V enables efficient switching.
- Wide operating temperature range from -55 to 150 degrees Celsius supports harsh environments.
- Compact PQFN 8-pin package with 5.85 mm length and 5.0 mm width for space-saving PCB layouts.
- Capability to handle maximum gate-source voltage of 20 volts ensures robustness.
Product Description
onsemi FDMS4D5N08LC is an N-Channel Power MOSFET designed using ON Semiconductor's advanced PowerTrench® process. It features Shielded Gate technology that minimizes on-state resistance while maintaining superior switching performance with a soft body diode.
This device offers a maximum continuous drain current of 116 amperes and withstands a maximum drain-source voltage of 80 volts. It is housed in a compact 8-pin PQFN surface mount package measuring 5.85 mm in length, 5.0 mm in width, and 1.05 mm in height, making it suitable for high-density electronic assemblies.
The MOSFET exhibits a maximum drain-to-source resistance of 7.5 milliohms, resulting in low conduction losses and improved efficiency. Its maximum power dissipation rating of 113.6 watts allows it to handle significant heat dissipation under load. Operating temperature ranges from -55°C to 150°C enable reliable use in industrial, automotive, and power management applications.
The typical gate charge of 51 nC at 5 V gate drive voltage facilitates efficient switching, lowering power dissipation and electromagnetic interference. The device supports a maximum gate-source voltage of 20 V, ensuring operational robustness.
This N-Channel enhancement mode MOSFET is suitable for a variety of applications including motor drives, power supply circuits, DC-DC converters, and industrial power management systems.
Utilizes PowerTrench® process with Shielded Gate technology for reduced on-state resistance. 116 A maximum continuous drain current for high power handling. 80 V maximum drain-source voltage for versatile voltage applications.
Low 7.5 mΩ maximum drain-source resistance for improved efficiency. Robust thermal performance with 113.6 W maximum power dissipation. Wide operating temperature range of -55°C to 150°C. Compact 8-pin PQFN surface mount package with small footprint.
Typical gate charge of 51 nC enables efficient switching.
This product is a new, advanced MOSFET suitable for industrial, automotive, and electronic power applications. Browse the onsemi brand and MOSFET category at EnvMart for related high-quality semiconductor devices.
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Frequently Asked Questions
The maximum continuous drain current of this model is 116 amperes, allowing for high power handling capabilities.
This N-Channel MOSFET can withstand a maximum drain-source voltage of 80 volts, making it suitable for various voltage applications.
The typical gate charge at Vgs = 5 V is 51 nanocoulombs, which facilitates efficient switching.
The PQFN package measures 5.85 mm in length, 5.0 mm in width, and has a height of 1.05 mm, making it compact for space-saving PCB layouts.
The maximum power dissipation rating is 113.6 watts, which allows for reliable thermal performance under load.
The maximum drain-to-source resistance is 7.5 milliohms, which helps reduce conduction losses and improve efficiency.
This model operates within a wide temperature range from -55°C to 150°C, suitable for harsh environments.
It features a surface mount design, which is advantageous for high-density electronic assemblies.
This model is an N-Channel enhancement mode MOSFET, designed for various power management applications.
The maximum gate-source voltage is 20 volts, ensuring operational robustness in various applications.
This MOSFET is suitable for applications including motor drives, power supply circuits, DC-DC converters, and industrial power management systems.
The country of origin for this MOSFET is India, indicating its manufacturing location.
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