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Infineon OptiMOS 5 N-Channel MOSFET 145 A 40 V 8-Pin TDSON-8 FL ISC015N04NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 5.35mm |
| Length | 6.1mm |
| Model | ISC015N04NM5ATMA1 |
| Width | 1.2mm |
| Mount Type | Surface |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON-8 FL |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 145A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Maximum Power Dissipation Pd | 115W |
| Typical Gate Charge Qg @ Vgs | 67nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 145 A ensures robust conduction.
- Drain-source voltage rating of 40 V suits low voltage applications.
- 8-pin TDSON-8 FL surface mount package enables compact PCB layouts.
- Maximum power dissipation of 115 W supports efficient thermal handling.
- Low drain-source resistance of 15 milliohms optimizes conduction losses.
- Wide operating temperature range from -55 °C to 175 °C enhances durability.
- Maximum gate-source voltage rated at 20 V provides safe drive margins.
- Typical gate charge of 67 nC reduces switching losses and improves efficiency.
Product Description
Infineon's OptiMOS 5 series N-Channel MOSFET ISC015N04NM5ATMA1 delivers a maximum continuous drain current of 145 A with a drain-source voltage rating of 40 V. Packaged in an 8-pin TDSON-8 FL surface mount format, this MOSFET provides a low on-resistance of 15 milliohms, which minimizes conduction losses in power circuits.
The device is engineered for robust operation with a maximum power dissipation of 115 W and a broad operating temperature range from -55 °C to 175 °C, making it suitable for demanding industrial and power electronic applications. The maximum gate-source voltage rating of 20 V and a typical gate charge of 67 nC contribute to efficient switching performance and lower electromagnetic interference.
This component is ideal for use in low voltage motor drives, power management, and other electronic designs requiring high reliability and thermal resilience. The compact package dimensions (6.1 mm length, 5.35 mm height, and 1.2 mm width) support space-saving PCB layouts. The product does not carry automotive standard certifications, highlighting its focus on industrial and commercial applications.
The Infineon OptiMOS 5 N-Channel MOSFET set includes a single device conforming to Pb-free lead plating standards and has undergone 100% avalanche testing to guarantee quality and performance.
Maximum continuous drain current: 145 A for high load capability. Maximum drain-source voltage: 40 V suitable for low voltage designs. Low drain-source resistance of 15 mΩ ensures reduced power loss. 8-pin TDSON-8 FL compact surface-mount package.
Wide operating temperature from -55 °C to 175 °C offers excellent durability. Gate charge of 67 nC favors high switching speed and efficiency. Maximum power dissipation rating of 115 W supports robust thermal management.
Pb-free lead plating aligns with environmental compliance standards. Explore more MOSFET solutions and power electronics components on EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 145 A, allowing for high load capability in various applications.
This MOSFET has a drain-source voltage rating of 40 V, making it suitable for low voltage applications.
It is packaged in an 8-pin TDSON-8 FL surface mount format, which supports compact PCB layouts.
The maximum power dissipation for this MOSFET is rated at 115 W, which supports efficient thermal handling.
This model operates within a temperature range of -55 °C to 175 °C, enhancing its durability in various conditions.
The typical gate charge is 67 nC, which helps reduce switching losses and improve efficiency.
It features a low drain-source resistance of 15 milliohms, optimizing conduction losses in power circuits.
The maximum gate-source voltage rating for this MOSFET is 20 V, providing safe drive margins during operation.
The dimensions are 6.1 mm in length, 5.35 mm in height, and 1.2 mm in width.
This model features an N-channel configuration, which is common for various power applications.
This model does not carry automotive standard certifications, indicating it is focused on industrial and commercial applications.
The country of origin for this model is India.
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