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onsemi N-Channel MOSFET, 21 A, 60 V Enhancement, 4-Pin LFPAK Package NVMYS025N06CLTWG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NVMYS025N06CLTWG |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | NVMYS025N06CL |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 43mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 24W |
| Typical Gate Charge Qg @ Vgs | 5.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features a compact 4-pin LFPAK surface mount package.
- Enhancement mode MOSFET with low Rds(on) of 43 mΩ minimizes conduction losses.
- Maximum power dissipation up to 24 W supports reliable operation.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Typical gate charge of 5.8 nC reduces driver losses and improves switching efficiency.
- Automotive standard compliant with AEC-Q101 ensuring enhanced board reliability.
- Forward voltage of 1.2 V for efficient conduction.
Product Description
onsemi NVMYS025N06CLTWG is a high-performance N-Channel Enhancement Mode MOSFET designed to provide efficient switching and power handling in automotive and industrial electronic applications. This MOSFET features a compact 4-pin LFPAK surface mount package with a footprint measuring approximately 5 mm by 4.25 mm and a height of 1.15 mm, allowing for space-saving PCB layouts.
It supports a maximum continuous drain current of 21 A at a drain-source voltage of 60 V, suitable for high current circuits requiring robust switching elements. With a low maximum drain-source resistance (Rds(on)) of 43 milliohms, the device minimizes conduction losses, improving overall efficiency.
The NVMYS025N06CLTWG offers a maximum power dissipation rating of 24 W, ensuring reliability under demanding thermal conditions. Its wide operating temperature range (-55°C to 175°C) makes it ideal for use in harsh environments common in automotive electronics. Compliance with the automotive industry standard AEC-Q101 further guarantees enhanced board-level reliability and suitability for automotive system design.
Additionally, the device features a typical gate charge of 5.8 nanocoulombs, which reduces driver losses and supports higher frequency operation. The maximum gate-source voltage rating of 20 V and a forward voltage drop of 1.2 V further contribute to efficient device operation.
This MOSFET is Pb-free and RoHS compliant, aligning with environmental safety standards. The combination of compact size, high current capability, and automotive grade reliability makes the onsemi NVMYS025N06CLTWG an excellent choice for advanced power management in industrial, automotive, and commercial electronics.
Features a compact 4-pin LFPAK surface mount package. Enhancement mode MOSFET with low Rds(on) of 43 mΩ minimizes conduction losses. Maximum power dissipation up to 24 W supports reliable operation. Wide operating temperature range from -55°C to 175°C for harsh environments.
Typical gate charge of 5.8 nC reduces driver losses and improves switching efficiency. Automotive standard compliant with AEC-Q101 ensuring enhanced board reliability. Forward voltage of 1.2 V for efficient conduction. Compact dimensions: 5 mm length, 4.25 mm width, and 1.15 mm height.
Explore more electronic components and semiconductors in the MOSFET category at EnvMart for your industrial and automotive projects.
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Frequently Asked Questions
The maximum continuous drain current for the NVMYS025N06CLTWG is 21 A.
This model has a maximum drain-source voltage rating of 60 V.
The maximum drain-source resistance (Rds(on)) for this MOSFET is 43 milliohms.
It operates within a wide temperature range from -55°C to 175°C.
The typical gate charge for this model is 5.8 nanocoulombs.
The LFPAK package measures approximately 5 mm in length, 4.25 mm in width, and 1.15 mm in height.
Yes, it is compliant with the automotive standard AEC-Q101, ensuring enhanced board reliability.
The maximum power dissipation rating is 24 W, supporting reliable operation under thermal conditions.
The forward voltage drop for this model is 1.2 V, which contributes to efficient conduction.
This model uses a surface mount type for installation.
This MOSFET features a pin count of 4.
The country of origin for this MOSFET is India.
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