$5.30
$5.14
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Nexperia N-Channel MOSFET, 120 A, 60 V Enhancement Mode, 3-Pin TO-263 Package PSMN1R7-60BS,118
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 4.5mm |
| Length | 10.3mm |
| Model | PSMN1R7-60BS,118 |
| Width | 11mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 306W |
| Typical Gate Charge Qg @ Vgs | 137nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Maximum continuous drain current of 120 amperes for demanding electronic circuits.
- Maximum drain-source voltage rating of 60 volts ensures robust power handling.
- Enhanced mode channel type designed for efficient switching performance.
- 3-pin TO-263 surface mount package allows compact PCB layouts.
- Maximum power dissipation of 306 watts supports high power applications.
- Wide operating temperature range from -55°C up to 175°C for reliability.
- Low drain-source resistance of 3.1 milliohms reduces conduction losses.
- Typical gate charge of 137 nanocoulombs for fast switching speeds.
Product Description
Nexperia PSMN1R7-60BS,118 is a high-performance N-Channel MOSFET designed for switching and amplification in electronic devices demanding up to 120 A continuous current and 60 V drain-source voltage. The enhancement mode transistor is housed in a compact 3-pin TO-263 surface mount package, facilitating integration into densely populated circuit boards.
This MOSFET operates reliably across a wide temperature range from -55°C to 175°C, supporting usage in demanding industrial, automotive, and power management environments. Its low on-resistance of 3.1 mΩ minimizes power loss and improves efficiency, while the typical gate charge of 137 nC enables rapid switching suitable for high-frequency applications.
The component supports a maximum power dissipation of 306 W, allowing it to handle substantial power loads safely. The device’s package dimensions are length 10.3 mm, width 11 mm, and height 4.5 mm, conforming to TO-263 standards for surface mounting.
Maximum continuous drain current of 120 A for heavy-duty applications. Maximum drain-source voltage of 60 V for robust power handling. Enhancement mode N-channel configuration for efficient switching. Compact 3-pin TO-263 package ideal for surface mounting.
High power dissipation rating of 306 W. Operating temperature range from -55°C to 175°C ensuring wide environmental compatibility. Low drain-source resistance of 3.1 mΩ minimizing conduction losses. Typical gate charge of 137 nC enabling fast switching.
Precise package dimensions: 10.3 mm by 11 mm by 4.5 mm. Manufactured in Philippines with compliance to quality standards.
This Nexperia MOSFET is suitable for industrial, electronic manufacturing, power management circuits, automotive electronic applications, and HVAC systems. For comprehensive usage, browse additional semiconductor components and power devices on EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 120 amperes, making it suitable for demanding electronic circuits.
This MOSFET has a maximum drain-source voltage rating of 60 volts, ensuring robust power handling capabilities.
It comes in a 3-pin TO-263 surface mount package with dimensions of 10.3 mm in length, 11 mm in width, and 4.5 mm in height.
The operating temperature range for this MOSFET is from -55°C to 175°C, allowing for reliable performance in various environments.
The typical gate charge for this model is 137 nanocoulombs, enabling fast switching speeds suitable for high-frequency applications.
This model supports a maximum power dissipation of 306 watts, allowing it to handle substantial power loads safely.
The drain-source resistance is 3.1 milliohms, which helps to minimize conduction losses.
It features an enhancement mode N-channel configuration, designed for efficient switching performance.
The maximum gate-source voltage ratings for this device are -20V and +20V.
This MOSFET is manufactured in the Philippines, complying with quality standards.
It is suitable for industrial, automotive electronic applications, power management circuits, and HVAC systems.
The 3-pin TO-263 surface mount package allows for compact PCB layouts, facilitating integration into densely populated circuit boards.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
Recently Viewed Products
$5.30
$5.14
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent