Infineon P7 N-Channel MOSFET, 9 A, 950 V P, 3-Pin TO-220 IPA95R750P7XKSA1

Infineon IPA95R750P7XKSA1 is a high-performance P7 series N-Channel MOSFET designed for power semiconductor applications requiring excellent efficiency and reliability. It features a maximum continuous drain current of 9 A and a maximum drain-source voltage of 950 V, making it suitable for switching and power management in industrial, automotive, and electronic applications.

The device is housed in a 3-pin TO-220 package that supports through-hole mounting, providing robust mechanical stability and ease of integration into printed circuit boards. Its maximum power dissipation is rated at 68 W, enabling it to handle significant load conditions safely within a temperature range from -55°C to 150°C.

The MOSFET includes an integrated Zener diode for electrostatic discharge (ESD) protection, enhancing device robustness. The typical gate charge of 15.3 nC at the specified gate-source voltage ensures efficient switching with minimal losses. A forward voltage drop of 900 mV contributes to low conduction losses during operation.

Physically compact, with dimensions of 29.75 mm height, 4.9 mm width, and 10.65 mm length, this MOSFET is optimized for applications demanding high power density in constrained spaces. Built on Infineon's latest CoolMOS™ P7 super junction technology, it offers superior figure of merit (FOM), reduced gate charge, and optimized on-resistance characteristics, enhancing performance in power conversion and motor control systems.

Maximum continuous drain current of 9 amperes provides reliable current handling for demanding loads. High drain-source voltage rating of 950 volts suits high-voltage switching operations. Compact TO-220 package supports through-hole assembly and robust mounting.

Wide operating temperature range accommodates a variety of environmental conditions. Integrated Zener diode protects against electrostatic discharge events. Low typical gate charge reduces switching losses and improves efficiency.

Forward voltage of 900 mV ensures low conduction losses during operation. Compact physical dimensions enable integration in space-constrained designs. CoolMOS™ P7 technology boosts switching performance and device reliability.

Suitable for use in industrial, automotive, power supply, and consumer electronics applications.

This product is ideal for industrial electronic design engineers seeking a reliable MOSFET for applications requiring high voltage, current, and power handling capabilities with excellent thermal and switching characteristics. Explore more Infineon MOSFETs and power semiconductors at EnvMart for your electronic component needs.