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Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN Surface Mount IQE030N06NM5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Length | 3.3mm |
| Model | IQE030N06NM5ATMA1 |
| Mount Type | Surface |
| Series | IQE |
| Maximum Operating Temperature | 150°C |
| Package Type | PQFN |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 253A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.85mΩ |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 16V |
| Forward Voltage Vf | 730mV |
Key Features
- This MOSFET features an 8-pin PQFN package suitable for surface mounting.
- It offers low on-resistance of 0.85 milliohm which enables efficient power handling.
- The device supports a maximum power dissipation of 81 W for high thermal performance.
- Operating temperature ranges from -55°C to 150°C ensuring reliability under harsh conditions.
- Maximum gate-source voltage rating is 16 V, suitable for robust switching applications.
- Forward voltage drop is 730 mV which contributes to reduced conduction losses.
- Typical gate charge is 80 nC at gate-source voltage, helping efficient gate drive performance.
- The compact length of 3.3 mm allows for optimized PCB layout and thermal management.
Product Description
Infineon IQE030N06NM5ATMA1 is a high-performance N-Channel MOSFET designed for demanding electronic and power management applications. It supports a maximum continuous drain current of 253 A at a drain-source voltage of 30 V, making it well-suited for high-current switching and power conversion scenarios.
The device is housed in an 8-pin PQFN surface mount package which ensures a low profile and excellent thermal conductivity. Its low drain-source resistance (Rds(on)) of 0.85 milliohms allows for high efficiency and lower heat generation during operation.
Operating temperatures from -55°C up to 150°C provide versatility for automotive and industrial environments, complying with AEC-Q101 automotive standards. The maximum power dissipation rating of 81 W demonstrates its capability for handling substantial thermal loads.
Additional electrical characteristics such as a maximum gate-source voltage of 16 V and a forward voltage drop of 730 mV optimize switching performance and conduction loss reduction. The typical gate charge of 80 nC ensures efficient switching transitions with reduced gate drive losses.
The compact 3.3 mm length and PQFN package enhance design flexibility, enabling improved PCB layout and thermal management. This MOSFET is ideal for use in industrial electronics, automotive systems, power supplies, motor drives, and other high-current applications requiring reliable and efficient semiconductor switching devices.
This MOSFET features an 8-pin PQFN package suitable for surface mounting. It offers low on-resistance of 0.85 milliohm which enables efficient power handling. The device supports a maximum power dissipation of 81 W for high thermal performance.
Operating temperature ranges from -55°C to 150°C ensuring reliability under harsh conditions. Maximum gate-source voltage rating is 16 V, suitable for robust switching applications. Forward voltage drop is 730 mV which contributes to reduced conduction losses.
Typical gate charge is 80 nC at gate-source voltage, helping efficient gate drive performance. The compact length of 3.3 mm allows for optimized PCB layout and thermal management. Explore the full range of Infineon MOSFETs and related semiconductor products at EnvMart for advanced industrial and automotive electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 253 A.
This MOSFET supports a maximum drain-source voltage of 30 V.
It has a low on-resistance of 0.85 milliohm, which helps in efficient power handling.
The maximum power dissipation rating for this device is 81 W, allowing for high thermal performance.
The operating temperature range is from -55°C to 150°C, ensuring reliability under harsh conditions.
This MOSFET has a maximum gate-source voltage rating of 16 V.
The typical gate charge is 80 nC at gate-source voltage, contributing to efficient gate drive performance.
It is housed in an 8-pin PQFN surface mount package, which is suitable for low-profile applications.
This device complies with the AEC-Q101 automotive standard, making it suitable for automotive applications.
The forward voltage drop is 730 mV, which helps in reducing conduction losses.
The length of this model is 3.3 mm, allowing for optimized PCB layout and thermal management.
This MOSFET meets RoHS standards, ensuring compliance with environmental regulations.
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