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Wolfspeed N-Channel MOSFET 31 A 1200 V Enhancement Mode 3-Pin TO-247 C2M0080120D

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Wolfspeed N-Channel MOSFET 31 A 1200 V Enhancement Mode 3-Pin TO-247 C2M0080120D

Name: Wolfspeed N-Channel MOSFET 31 A 1200 V Enhancement Mode 3-Pin TO-247 C2M0080120D
Brand: Wolfspeed
SKU: 389315
Price: 41.29 USD
Availability: InStock

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Category MOSFETs Brand Wolfspeed Condition New

Specifications

Country of Origin	China
Brand	Wolfspeed
Height	21.1mm
Length	16.13mm
Model	C2M0080120D
Width	5.21mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	31A
Maximum Drain Source Voltage Vds	1200V
Maximum Drain Source Resistance Rds	208mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	208W
Typical Gate Charge Qg @ Vgs	49.2nC
Maximum Gate Source Voltage Vgs	-10, +25V
Forward Voltage Vf	4.3V

Key Features

This enhancement-mode silicon carbide MOSFET ensures high switching efficiency and power density.
It features a maximum power dissipation of 208 W suitable for demanding industrial applications.
Designed for through-hole mounting, it supports high-speed switching with low on-resistance.
The device operates reliably from -55°C up to 150°C, making it suitable for harsh environments.
Low typical gate charge improves switching performance and reduces losses.
High maximum gate-source voltage range of -10 V to +25 V enables flexibility in gate drive design.
Compact dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width allow ease of integration.
Manufactured using Wolfspeed's second-generation SiC technology for enhanced durability and efficiency.

Product Description

Wolfspeed C2M0080120D is a high-performance N-Channel MOSFET designed for industrial and power electronics applications. It supports a maximum continuous drain current of 31 A and a maximum drain-source voltage of 1200 V, housed in a 3-pin TO-247 package optimized for through-hole mounting.

This enhancement-mode silicon carbide MOSFET offers high switching speeds and low on-resistance, enabling improved system efficiency and reduced cooling requirements. It operates reliably across a wide temperature range from -55°C to 150°C, suitable for demanding environments such as industrial manufacturing, power conversion, and automotive power electronics.

With a maximum power dissipation rating of 208 W and a typical gate charge of 49.2 nC at Vgs, this device ensures excellent switching performance. The maximum gate-source voltage of -10 V to +25 V provides robust gate drive margin, enhancing device reliability and performance under varying operating conditions.

The compact physical dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width enable easy PCB layout and integration into power modules or discrete transistor circuits.

Wolfspeed’s C2M series represents the second generation of silicon carbide MOSFETs, delivering significant improvements in power density and switching efficiency, making them ideal for applications in industrial, laboratory, construction, HVAC, manufacturing, and automotive sectors.

This MOSFET is suitable for power management, inverter circuits, motor drives, and other high-voltage switching applications. It offers latch-up resistant operation and multiple devices can be paralleled for increased current capacity.

The product is manufactured in China and conforms to Wolfspeed’s stringent quality standards. Explore more Wolfspeed semiconductor products and power electronics components at EnvMart for your next industrial or commercial project.