Wolfspeed N-Channel MOSFET 90 A 1200 V Enhancement Mode 3-Pin TO-247 C2M0025120D

Wolfspeed C2M0025120D is a high-performance N-Channel MOSFET designed with second-generation Silicon Carbide (SiC) technology. It supports a maximum continuous drain current of 90 A and withstands up to 1200 V drain-source voltage, making it ideal for demanding power applications. The enhancement-mode device provides excellent power density and switching efficiency, which reduces cooling requirements and enhances system efficiency.

This MOSFET is packaged in a 3-pin TO-247 through-hole form factor, facilitating easy mounting and integration in PCB designs. Its maximum power dissipation capability of 463 W enables robust operation under heavy load conditions. The device features a low 34 mΩ typical Rds(on), minimizing conduction losses during switch operation.

Engineered for durability, it operates effectively in extreme temperatures ranging from -55°C to 150°C. A gate charge of 161 nC and a maximum gate-source voltage of 25 V ensure responsive and reliable switching performance. The device’s compact dimensions of 16.13 mm length, 21.1 mm width, and 5.21 mm height allow for space-efficient application designs.

Wolfspeed Silicon Carbide Power MOSFETs, including the C2M series, are widely used in industrial, automotive, power conversion, and renewable energy applications for improved efficiency and higher switching frequency capabilities. The enhancement-mode operation enables simple gate drive requirements and resistance to latch-up events.

Offers maximum continuous drain current of 90 A for robust performance. Features a maximum drain-source voltage of 1200 V suitable for high voltage applications. Utilizes enhancement-mode silicon carbide technology for improved switching efficiency.

Package type is TO-247 with through hole mount and 3 pins for easy PCB integration. Maximum power dissipation is 463 W, enabling heavy load handling. Exhibits low maximum drain-source resistance of 34 mΩ to reduce conduction losses.

Operates reliably between -55°C to 150°C temperatures for industrial use. Typical gate charge at Vgs is 161 nC for efficient gate driving. Maximum gate-source voltage rating is 25 V ensuring gate protection. Compact dimensions: length 16.13 mm, width 21.1 mm, height 5.21 mm.

Discover the extensive range of Wolfspeed power MOSFETs and other semiconductor devices available at EnvMart to improve your industrial and commercial electronic designs.