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ROHM N-Channel MOSFET, 6.5 A Continuous Drain Current, 60 V Drain-Source Voltage, Enhancement Mode, 8-Pin SOP SH8KC6TB1
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 5.2mm |
| Length | 4.05mm |
| Model | SH8KC6TB1 |
| Width | 1.75mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 6.5 amperes for power handling.
- Drain-source voltage rating up to 60 volts ensuring reliability.
- Enhancement mode channel operation enhances switching efficiency.
- Compact 8-pin SOP package designed for surface mount applications.
- Typical gate charge of 7.6 nC enabling fast switching speeds.
- Maximum power dissipation of 2 watts suitable for low power circuits.
- Operating temperature range from -55°C to 150°C for robust performance.
- Low on-resistance of 32 milliohms to minimize conduction losses.
Product Description
ROHM SH8KC6TB1 is an N-Channel MOSFET designed for switching and amplification applications in electronic circuits. It supports a continuous drain current of 6.5 A and a maximum drain-source voltage of 60 V, making it suitable for moderate power loads. This device employs enhancement mode channel operation housed in a compact 8-pin SOP surface-mount package for easy integration on PCBs.
The MOSFET's low on-resistance of 32 milliohms enables efficient power delivery by minimizing losses during conduction. With a typical gate charge of 7.6 nC at 20 V, it provides rapid switching capabilities, ideal for power management and control circuits.
It is capable of operating in harsh temperature environments ranging from -55°C to 150°C, ensuring reliability in automotive, industrial, and consumer electronics sectors. The maximum power dissipation rating of 2 W allows this MOSFET to operate in compact designs with moderate thermal management.
The forward voltage is typically 1.2 V, reducing voltage drop and improving energy efficiency. The device features Pb-free plating and halogen-free construction, complying with environmental standards.
Maximum continuous drain current of 6.5 amperes for power handling. Drain-source voltage rating up to 60 volts ensuring reliability. Enhancement mode channel operation enhances switching efficiency. Compact 8-pin SOP package designed for surface mount applications.
Typical gate charge of 7.6 nC enabling fast switching speeds. Maximum power dissipation of 2 watts suitable for low power circuits. Operating temperature range from -55°C to 150°C for robust performance. Low on-resistance of 32 milliohms to minimize conduction losses.
Forward voltage of 1.2 volts ensuring low voltage drop during conduction.
This MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring reliable and efficient switching components. It supports typical PCB assembly processes with surface mount technology and is RoHS compliant.
Explore more high-quality power semiconductors and discrete components in EnvMart's Electronics & Electricals section for enhanced design and manufacturing solutions.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 6.5 A.
The maximum drain-source voltage rating is 60 V.
The typical gate charge is 7.6 nC at 20 V.
The on-resistance is 32 milliohms, which helps minimize conduction losses.
The operating temperature range is from -55°C to 150°C.
This model uses an 8-pin SOP package designed for surface mount applications.
The maximum power dissipation rating is 2 W.
The forward voltage is typically 1.2 V, which reduces voltage drop during conduction.
The channel mode is enhancement, which enhances switching efficiency.
The height of this MOSFET is 5.2 mm.
The width is 1.75 mm and the length is 4.05 mm.
The maximum gate-source voltage is 20 V.
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