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Infineon N-Channel MOSFET 381 A Continuous Drain Current 40 V Drain Source Voltage 8-Pin TDSON Package BSC034N10LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | BSC034N10LS5ATMA1 |
| Mount Type | Surface |
| Series | BSC |
| Maximum Operating Temperature | +150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 381A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Delivers a maximum continuous drain current of 381 amperes for high power applications.
- Features a low maximum drain source resistance of 0.7 milliohms to minimize conduction losses.
- Supports surface mounting with an 8-pin TDSON package for compact board layouts.
- Operates reliably in a wide temperature range from -55°C to +150°C for robust thermal performance.
- Typical gate charge of 80 nanoCoulombs offers precise switching control.
- Capable of dissipating up to 81 watts power continuously while maintaining thermal stability.
- Maximum gate-source voltage up to 20 volts allows flexible drive margins.
- Ideal for applications including DC-DC converters, synchronous rectification, and motor drivers.
Product Description
Infineon BSC034N10LS5ATMA1 is a high-current N-Channel MOSFET designed for power switching and conversion in surface-mount electronic circuits. With a maximum continuous drain current rating of 381 amperes and a drain-source voltage rating of 40 volts, this component supports demanding power stages with efficient conduction.
The device features a TDSON package with 8 pins, enabling compact, space-saving board integration suitable for industrial, server power distribution, and automotive electronics. Its exceptionally low on-resistance of 0.7 milliohms reduces conduction losses significantly, improving overall system efficiency and reducing thermal load.
Designed to operate within an extended temperature range from -55°C to +150°C, it is ideal for environments requiring robust thermal tolerance and stability. The typical gate charge of 80 nanoCoulombs ensures predictable switching performance, while the gate-source voltage tolerance of up to 20 volts provides a flexible driving margin for various control schemes.
This MOSFET is suited for high-current DC-DC converters, synchronous rectifiers in switching regulators, motor driver circuits requiring low conduction losses, and server power modules. Its compliance with RoHS standards confirms adherence to environmental safety requirements.
Delivers a maximum continuous drain current of 381 amperes for high power applications. Features a low maximum drain source resistance of 0.7 milliohms to minimize conduction losses. Supports surface mounting with an 8-pin TDSON package for compact board layouts.
Operates reliably in a wide temperature range from -55°C to +150°C for robust thermal performance. Typical gate charge of 80 nanoCoulombs offers precise switching control. Capable of dissipating up to 81 watts power continuously while maintaining thermal stability.
Maximum gate-source voltage up to 20 volts allows flexible drive margins. Ideal for applications including DC-DC converters, synchronous rectification, and motor drivers. Explore high-performance MOSFETs and other discrete semiconductor components in the Infineon product range at EnvMart for industrial, laboratory, and commercial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 381 amperes, making it suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 40 volts.
It comes in a TDSON package with 8 pins, supporting surface mounting for compact designs.
This unit operates reliably in a temperature range from -55°C to +150°C.
It is capable of dissipating up to 81 watts of power continuously while maintaining thermal stability.
The typical gate charge is 80 nanoCoulombs, which ensures precise switching control.
The maximum gate-source voltage for this model is up to 20 volts, allowing for flexible drive margins.
It features a maximum drain-source resistance of 0.7 milliohms, which helps minimize conduction losses.
Yes, it complies with RoHS standards, confirming adherence to environmental safety requirements.
This model features an N-channel configuration, which is commonly used for power switching.
Key features include a low on-resistance, wide temperature operating range, and compact TDSON package for efficient performance in high-power applications.
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