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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPB100N06S2L05ATMA2 |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 4.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Infineon IPB100N06S2L05ATMA2 is a high-performance OptiMOS N-Channel MOSFET designed to handle a maximum continuous drain current of 100 A and a maximum drain-source voltage of 55 V. Packaged in a 3-pin TO-263 surface mount casing, this device offers excellent thermal efficiency and low conduction losses, making it highly suitable for demanding power electronics applications.
This MOSFET supports enhanced channel operation mode, contributing to improved power switching characteristics, ideal for industrial, automotive, and consumer electronics. Operating between a minimum of -55°C up to a maximum of 175°C, it ensures reliability over a broad temperature range.
The maximum drain-source resistance of 4.4 milliohms minimizes power dissipation, while the typical gate charge of 19 nC enables fast switching with low gate drive power. The device features a forward voltage of 900 mV, balancing performance and efficiency effectively.
Qualified to meet Automotive Standard AEC-Q101, the product is suitable for automotive applications demanding rigorous testing and high reliability. The robust TO-263 package enhances heat dissipation and facilitates mounting on printed circuit boards.
Infineon’s OptiMOS series is well recognized for its superior quality and innovation in semiconductor components, aimed at delivering reliability and performance in power management systems.
Designed with OptiMOS technology for high efficiency and low switching losses. Maximum drain-source resistance of 4.4 milliohms ensures minimal conduction losses. 3-pin TO-263 package supports surface mount applications.
Enhanced channel mode for robust power performance. Operating temperature range from -55°C to 175°C. Maximum gate-source voltage of 20 V for flexibility. Forward voltage of 900 mV suitable for power switching. Typical gate charge of 19 nC enables efficient switching.
Automotive Standard AEC-Q101 compliance for automotive-grade reliability. Explore more in the Semiconductor and Power Electronics category on EnvMart for advanced MOSFET solutions and competitive offers.
Explore more products in our MOSFETs category.
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