Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

Infineon OptiMOS N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2

Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IPB100N06S2L05ATMA2
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 55V
Maximum Drain Source Resistance Rds 4.4mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 300W
Typical Gate Charge Qg @ Vgs 19nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 900mV

Key Features

  • Designed with OptiMOS technology for high efficiency and low switching losses.
  • Maximum drain-source resistance of 4.4 milliohms ensures minimal conduction losses.
  • Supports surface mount application with a sturdy TO-263 package.
  • Enhanced channel mode provides robust performance under high loads.
  • Operates reliably from -55°C to 175°C ambient temperature.
  • Maximum gate-source voltage rating of 20 V for improved control and flexibility.
  • Forward voltage of 900 mV suitable for power applications.
  • Typical gate charge of 19 nC at Vgs.

Product Description

Infineon IPB100N06S2L05ATMA2 is a high-performance OptiMOS N-Channel MOSFET designed to handle a maximum continuous drain current of 100 A and a maximum drain-source voltage of 55 V. Packaged in a 3-pin TO-263 surface mount casing, this device offers excellent thermal efficiency and low conduction losses, making it highly suitable for demanding power electronics applications.

This MOSFET supports enhanced channel operation mode, contributing to improved power switching characteristics, ideal for industrial, automotive, and consumer electronics. Operating between a minimum of -55°C up to a maximum of 175°C, it ensures reliability over a broad temperature range.

The maximum drain-source resistance of 4.4 milliohms minimizes power dissipation, while the typical gate charge of 19 nC enables fast switching with low gate drive power. The device features a forward voltage of 900 mV, balancing performance and efficiency effectively.

Qualified to meet Automotive Standard AEC-Q101, the product is suitable for automotive applications demanding rigorous testing and high reliability. The robust TO-263 package enhances heat dissipation and facilitates mounting on printed circuit boards.

Infineon’s OptiMOS series is well recognized for its superior quality and innovation in semiconductor components, aimed at delivering reliability and performance in power management systems.

Designed with OptiMOS technology for high efficiency and low switching losses. Maximum drain-source resistance of 4.4 milliohms ensures minimal conduction losses. 3-pin TO-263 package supports surface mount applications.

Enhanced channel mode for robust power performance. Operating temperature range from -55°C to 175°C. Maximum gate-source voltage of 20 V for flexibility. Forward voltage of 900 mV suitable for power switching. Typical gate charge of 19 nC enables efficient switching.

Automotive Standard AEC-Q101 compliance for automotive-grade reliability. Explore more in the Semiconductor and Power Electronics category on EnvMart for advanced MOSFET solutions and competitive offers.

Explore more products in our MOSFETs category.

Infineon OptiMOS N-Channel MOSFET, 100 A, 55 V Enhancement, 3-Pin TO-263 IPB100N06S2L05ATMA2
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 100 A.

It can handle a maximum drain-source voltage of 55 V.

This device is packaged in a 3-pin TO-263 surface mount casing.

The operating temperature range is from -55°C to 175°C.

The maximum gate-source voltage rating is 20 V.

The maximum drain-source resistance is 4.4 milliohms.

The typical gate charge at Vgs is 19 nC.

Yes, it is qualified to meet Automotive Standard AEC-Q101.

The forward voltage is 900 mV, suitable for power applications.

This model features an N-channel type.

It belongs to the OptiMOS series.

The maximum power dissipation rating is 300 W.

Related Products

Other Products from this brand

Recently Viewed Products

$3.45
$3.35 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$3.45
$3.35
Tax included