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Infineon RF Amplifier Broadband MMIC SiGe 19 dB Gain 4-Pin SOT-343 2GHz BGA616H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 0.8mm |
| Length | 2mm |
| Model | BGA616H6327XTSA1 |
| Technology | SiGe |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-343 |
| Minimum Operating Temperature | -65°C |
| Gain | 19dB |
| Pin Count | 4 |
| Maximum Supply Voltage | 4.5V |
| Amplifier Type | Broadband MMIC |
| Noise Figure | 2.6dB |
| Third Order Intercept OIP3 | 29dBm |
| P1dB - Compression Point | 18dBm |
Key Features
- Features Broadband MMIC amplification technology based on SiGe.
- Offers a gain of 19 dB for efficient signal boosting.
- Compact 4-pin SOT-343 surface mount package ensures easy PCB integration.
- Maximum supply voltage of 4.5 V for low power operation.
- Noise figure of 2.6 dB optimizes signal clarity.
- P1dB compression point at 18 dBm for reliable linear amplification.
- Operates in a temperature range from -65°C to 150°C for versatile environments.
- Third order intercept (OIP3) of 29 dBm enhances signal performance.
Product Description
Infineon's BGA616H6327XTSA1 is a high-performance RF broadband MMIC amplifier designed for wide frequency range applications up to 2 GHz. Utilizing SiGe technology, this amplifier offers excellent gain and noise figure, making it suitable for sensitive RF front-end circuits.
Packaged in a compact 4-pin SOT-343 surface mount device, the amplifier supports efficient integration on printed circuit boards, facilitating space-saving designs in mobile and communication equipment.
Key electrical parameters include a gain of 19 dB and a noise figure of 2.6 dB, ensuring low signal distortion and high signal-to-noise ratio. The device operates reliably over a broad temperature range, from -65°C to 150°C, which suits harsh operating environments in industrial and automotive applications.
With a maximum supply voltage of 4.5 V and robust linearity indicated by a P1dB compression point of 18 dBm and an OIP3 of 29 dBm, the BGA616H6327XTSA1 guarantees stable amplification performance. This product is ideal for RF amplification, wireless communication systems, GPS modules, and other broadband applications.
Package dimensions of 2 mm length and 0.8 mm height contribute to its compact format. Although it does not conform to automotive or other specific standards, its wide operating conditions make it versatile for various electronic system designs.
Features Broadband MMIC amplification technology based on SiGe. Offers a gain of 19 dB for efficient signal boosting. Compact 4-pin SOT-343 surface mount package ensures easy PCB integration. Maximum supply voltage of 4.5 V for low power operation.
Noise figure of 2.6 dB optimizes signal clarity. P1dB compression point at 18 dBm for reliable linear amplification. Operates in a temperature range from -65°C to 150°C for versatile environments. Third order intercept (OIP3) of 29 dBm enhances signal performance.
This Infineon RF Amplifier is well-suited for use in industrial, communication, and electronics manufacturing sectors. Browse similar RF amplifier ICs and semiconductor components at EnvMart for additional options.
Explore more products in our RF Amplifiers ICs category.
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Frequently Asked Questions
This model offers a gain of 19 dB, which is designed for efficient signal boosting in various applications.
The noise figure is 2.6 dB, optimizing signal clarity and ensuring low signal distortion.
The maximum supply voltage is 4.5 V, allowing for low power operation in various circuits.
It operates reliably within a temperature range from -65°C to 150°C, making it suitable for harsh environments.
The P1dB compression point is at 18 dBm, indicating reliable linear amplification performance.
The third order intercept (OIP3) is 29 dBm, enhancing overall signal performance.
This unit comes in a compact 4-pin SOT-343 surface mount package, facilitating easy PCB integration.
The dimensions are 2 mm in length and 0.8 mm in height, contributing to its compact format.
It utilizes SiGe technology for broadband MMIC amplification, suitable for sensitive RF applications.
This model is ideal for RF amplification, wireless communication systems, and GPS modules among other broadband applications.
The pin count for this unit is 4, which is typical for its compact design.
The country of origin for this model is India.
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