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Infineon RF Amplifier Broadband MMIC SiGe 19 dB Gain 4-Pin SOT-343 2GHz BGA616H6327XTSA1

Category RF Amplifiers ICs Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 0.8mm
Length 2mm
Model BGA616H6327XTSA1
Technology SiGe
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-343
Minimum Operating Temperature -65°C
Gain 19dB
Pin Count 4
Maximum Supply Voltage 4.5V
Amplifier Type Broadband MMIC
Noise Figure 2.6dB
Third Order Intercept OIP3 29dBm
P1dB - Compression Point 18dBm

Key Features

  • Features Broadband MMIC amplification technology based on SiGe.
  • Offers a gain of 19 dB for efficient signal boosting.
  • Compact 4-pin SOT-343 surface mount package ensures easy PCB integration.
  • Maximum supply voltage of 4.5 V for low power operation.
  • Noise figure of 2.6 dB optimizes signal clarity.
  • P1dB compression point at 18 dBm for reliable linear amplification.
  • Operates in a temperature range from -65°C to 150°C for versatile environments.
  • Third order intercept (OIP3) of 29 dBm enhances signal performance.

Product Description

Infineon's BGA616H6327XTSA1 is a high-performance RF broadband MMIC amplifier designed for wide frequency range applications up to 2 GHz. Utilizing SiGe technology, this amplifier offers excellent gain and noise figure, making it suitable for sensitive RF front-end circuits.

Packaged in a compact 4-pin SOT-343 surface mount device, the amplifier supports efficient integration on printed circuit boards, facilitating space-saving designs in mobile and communication equipment.

Key electrical parameters include a gain of 19 dB and a noise figure of 2.6 dB, ensuring low signal distortion and high signal-to-noise ratio. The device operates reliably over a broad temperature range, from -65°C to 150°C, which suits harsh operating environments in industrial and automotive applications.

With a maximum supply voltage of 4.5 V and robust linearity indicated by a P1dB compression point of 18 dBm and an OIP3 of 29 dBm, the BGA616H6327XTSA1 guarantees stable amplification performance. This product is ideal for RF amplification, wireless communication systems, GPS modules, and other broadband applications.

Package dimensions of 2 mm length and 0.8 mm height contribute to its compact format. Although it does not conform to automotive or other specific standards, its wide operating conditions make it versatile for various electronic system designs.

Features Broadband MMIC amplification technology based on SiGe. Offers a gain of 19 dB for efficient signal boosting. Compact 4-pin SOT-343 surface mount package ensures easy PCB integration. Maximum supply voltage of 4.5 V for low power operation.

Noise figure of 2.6 dB optimizes signal clarity. P1dB compression point at 18 dBm for reliable linear amplification. Operates in a temperature range from -65°C to 150°C for versatile environments. Third order intercept (OIP3) of 29 dBm enhances signal performance.

This Infineon RF Amplifier is well-suited for use in industrial, communication, and electronics manufacturing sectors. Browse similar RF amplifier ICs and semiconductor components at EnvMart for additional options.

Explore more products in our RF Amplifiers ICs category.

Infineon RF Amplifier Broadband MMIC SiGe 19 dB Gain 4-Pin SOT-343 2GHz BGA616H6327XTSA1
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