onsemi NTB Type N-Channel MOSFET 60A 1200V Enhancement Mode TO-263 7-Pin NTBG040N120SC1

onsemi NTBG040N120SC1 is a high-performance N-Channel Power MOSFET based on Silicon Carbide (SiC) technology. Designed to handle continuous drain currents up to 60 Amperes and blocking voltages up to 1200 Volts, it is ideal for demanding power electronics applications. The device is housed in a 7-pin TO-263 surface mount package which provides excellent thermal management and compact footprint.

This MOSFET features an ultra-low drain-source resistance of 40 milliohms, enabling efficient power handling and reduced energy losses. Its typical gate charge is 106 nanocoulombs, allowing faster switching speeds suitable for inverter circuits, DC-DC converters, and uninterruptible power supplies (UPS).

The device operates reliably in a wide temperature range from -55°C to 175°C, supporting industrial and automotive environments. The enhancement mode channel configuration ensures reliable switching behavior. The maximum power dissipation is rated at 357 Watts, making it well suited for high power dissipation challenges in power conversion and motor control.

This product complies with RoHS environmental standards and is lead-free, aligning with global environmental regulations. The maximum gate-source voltage rating is 25 Volts and the typical forward voltage during conduction is 3.7 Volts.

Typical use cases include power amplifiers, power supplies, DC-DC converters, inverters, motor drives, and UPS systems in industrial, automotive, and commercial applications. The silicon carbide technology enhances performance in terms of efficiency, thermal capability, and switching speed compared to traditional silicon MOSFETs.

The MOSFET's compact TO-263 package simplifies system integration while providing excellent thermal dissipation. The 7-pin configuration allows stable connection and heat transfer during high-load operation.

Explore the full range of semiconductors and Power MOSFETs on EnvMart for applications in electronics manufacturing, repair, and design engineering projects. This MOSFET uses Silicon Carbide (SiC) technology for enhanced performance.

Maximum continuous drain current is 60A with a drain-source voltage of 1200V. 7-pin TO-263 surface mount package ensures efficient heat dissipation. Maximum drain-source resistance is a low 40 milliohms. Operating temperature range from -55°C up to 175°C supports harsh environments.

Maximum power dissipation rated at 357 Watts supports high power applications. Typical gate charge of 106 nanocoulombs allows fast switching. Device is Pb-free and RoHS compliant for environmental safety. Maximum gate-source voltage is 25V with an enhancement channel mode.

Forward voltage is 3.7V typical for conduction characteristics.