DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET, 4.98 A, 30 V Enhancement Mode, 8-Pin SOIC ZXMHC3F381N8TC

DiodesZetex ZXMHC3F381N8TC is a full bridge power MOSFET featuring 4 type P and type N-channel transistors in one 8-pin SOIC package. It offers a maximum continuous drain current of 4.98 A and operates at a maximum drain-source voltage of 30 V in enhancement mode, delivering efficient switching capabilities for industrial, automotive, and electronic power management applications.

This MOSFET is designed to handle high power dissipation up to 1.35 W with a low on-state resistance of 80 milliohms, ensuring minimal power loss and heat generation. Its robust specifications enable operation in extreme temperatures ranging from -55°C to 150°C, making it suitable for demanding environments such as automotive electronics and industrial controls.

The device's typical gate charge of 9 nanocoulombs supports fast switching speeds needed in high-frequency power converters and motor controls. The 8-pin SOIC surface mount package allows for compact PCB layout, optimizing space usage without compromising performance.

Additional features include compliance with international standards like RoHS for environmental safety, UL 94V-0 flame retardancy, AEC-Q101 automotive reliability, MIL-STD-202 military standards, and J-STD-020 for moisture sensitivity, ensuring quality and reliability across diverse industries.

Physical dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height, suiting compact electronic designs. The transistor configuration is a full bridge type with 4 elements per chip. This product is made in China and ideal for applications requiring precise and efficient power switching in electronic devices, industrial machinery, and automotive systems.

Supports a maximum continuous drain current of 4.98 A. Maximum drain-source voltage rating of 30 V ensures reliable operation in low voltage applications. 8-pin SOIC surface-mount package for compact PCB integration. Enhancement mode with low drain-source resistance of 80mΩ for energy efficiency.

Operating temperature range from -55°C to 150°C suits harsh environments. Typical gate charge of 9nC enhances switching performance. Forward voltage of 0.82 V at rated conditions. Compliant with RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, and J-STD-020 standards.

Compact dimensions with length 5 mm, width 4 mm, and height 1.5 mm. Made in China with robust full bridge transistor configuration. Explore more Power MOSFETs and semiconductor components in our comprehensive electronics catalog at EnvMart for optimal industrial, construction, and manufacturing solutions.