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STMicroelectronics MDmesh N-Channel MOSFET 21 A 500 V Enhancement Mode 3-Pin TO-220 STF28NM50N

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STMicroelectronics MDmesh N-Channel MOSFET 21 A 500 V Enhancement Mode 3-Pin TO-220 STF28NM50N

Name: STMicroelectronics MDmesh N-Channel MOSFET 21 A 500 V Enhancement Mode 3-Pin TO-220 STF28NM50N
Brand: STMicroelectronics
SKU: 409217
Price: 3.35 USD
Availability: InStock

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Category Semiconductor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	16.4mm
Length	10.4mm
Model	STF28NM50N
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	21A
Maximum Drain Source Voltage Vds	500V
Maximum Drain Source Resistance Rds	158mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	35W
Typical Gate Charge Qg @ Vgs	50nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.5V

Key Features

High current handling capability ensures reliable power management.
Enhancement mode N-Channel design provides efficient switching performance.
TO-220 through-hole package supports easy mounting and heat dissipation.
Maximum power dissipation rated at 35 W for robust operation.
Wide operating temperature range from -55°C to 150°C.
Low maximum drain-source resistance of 158 mΩ reduces conduction losses.
Typical gate charge of 50 nC at Vgs enhances switching efficiency.
Maximum gate-source voltage range of -25 V to +25 V enables flexible control.

Product Description

The STMicroelectronics STF28NM50N is a high-performance MDmesh N-Channel MOSFET designed for demanding power switching applications. Featuring a continuous drain current rating of 21 A and a drain-source voltage of 500 V, this device is suited for efficient power management circuits requiring reliability under high electrical stress.

Packaged in a 3-pin TO-220 through-hole configuration, it provides simplified mounting, effective thermal dissipation, and robust mechanical stability. The enhancement mode channel type offers excellent switch performance, while the low maximum drain-source resistance (Rds(on)) of 158 mΩ minimizes conduction losses, contributing to energy efficiency.

This MOSFET supports a wide operating temperature range from -55°C to 150°C, accommodating varied industrial and electronic environments including power supplies, motor control, and inverter applications. The typical gate charge of 50 nC at Vgs facilitates rapid switching speeds, and the gate-source voltage tolerance from -25 V to +25 V provides design flexibility.

Compact physical dimensions of 10.4 mm length, 4.6 mm width, and 16.4 mm height enable integration into space-constrained assemblies. The maximum power dissipation rating of 35 W ensures durability and stable operation under sustained load. This device has no specific automotive or industry certifications but meets quality standards suitable for general industrial use.

Overall, the STMicroelectronics STF28NM50N MOSFET is a reliable and efficient component tailored for power electronics in industrial, laboratory, manufacturing, and commercial electronic systems.

High current rating for demanding power requirements. Low Rds(on) to reduce heat generation and improve efficiency. Wide temperature range supports diverse operating environments. Enhanced switching capabilities with typical gate charge of 50 nC.

Robust TO-220 package for easy installation and heat dissipation. Suitable for industrial power supply and control circuits. Explore more quality Semiconductor components like this MDmesh MOSFET in the Electronics & Electricals category at EnvMart.