Microchip Type P-Channel MOSFET, Enhancement Mode, 3-Pin TO-92 Package, 140 A, 30 V VP0109N3-G

Microchip VP0109N3-G is a high-performance Type P-Channel MOSFET in a compact 3-pin TO-92 through-hole package. It features enhancement mode operation with a vertical DMOS structure, combining high power handling capabilities with the benefits of MOSFET technology such as high input impedance and fast switching speeds.

This MOSFET is ideal for industrial, power management, and electronic switching applications requiring efficient, reliable control of currents up to 140 A at voltages up to 30 V. The device offers excellent thermal stability and is free from thermal runaway and secondary breakdown, ensuring long-term operational reliability in demanding environments.

Its low maximum drain-source resistance of 8 milliohms minimizes conduction losses, supporting energy-efficient designs. The integral source-drain diode enhances switching performance, making this MOSFET adaptable to enhanced driver and inverter circuits.

The VP0109N3-G MOSFET supports a wide operating temperature range from -55°C up to 150°C, making it suitable for automotive, industrial, HVAC, and manufacturing electronics usage.

Key attributes include ease of paralleling for current scaling, low gate drive power requirements, and fast switching capabilities. The through-hole TO-92 package facilitates assembly in prototype and production PCBs.

Provides a maximum continuous drain current of 140 A for demanding power applications. Operates with a maximum drain-source voltage rating of 30 V. Features a 3-pin TO-92 through-hole package for easy PCB insertion and soldering.

Designed with enhancement mode for normally off switching behavior. Low maximum drain-source resistance ensures efficient conduction and low power loss. Offers excellent thermal stability with a maximum operating temperature of 150°C.

Built-in integral source-drain diode improves reverse conduction performance. Supplies a maximum gate-source voltage of ±20 V for gate drive compatibility. Forward voltage of 1.8 V supports efficient switching with low voltage drop.

Operates reliably from -55°C to 150°C, suitable for harsh environments.

This versatile MOSFET is well suited to industrial electronics, laboratory instrumentation, power supplies, and automotive electronic control systems. Its robust design ensures dependable performance in high current switching and amplification applications.

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