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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 2.2mm |
| Model | BSS84AKS,115 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | Trench MOSFET |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 160mA |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 320mW |
| Typical Gate Charge Qg @ Vgs | 0.26nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Nexperia BSS84AKS,115 is a dual P-Channel isolated Trench MOSFET transistor designed for advanced electronic and power applications. It supports a maximum continuous drain current of 160mA and a maximum drain-source voltage of 50 volts, making it suitable for low power high-efficiency circuits.
This MOSFET features an enhancement mode channel and is configured with an isolated transistor design to prevent interference between elements. It is housed in a compact 6-pin SC-88 surface mount package, with precise physical dimensions of 2.2mm length, 1.35mm width, and 1mm height to accommodate dense board layouts.
With a drain-source resistance of 7.5Ω, it delivers reliable switching performance with maximum power dissipation rated at 320mW, allowing it to withstand operating temperatures up to 150°C. The typical gate charge of 0.26nC ensures efficient switching operations with low gate drive power.
The device is qualified to the automotive standard AEC-Q101 and can operate in temperature conditions ranging from -55°C to +150°C, ensuring robustness and suitability for automotive and industrial electronics environments.
This MOSFET transistor is ideal for applications in power management, signal switching, and electronic component designs demanding reliable dual P-channel MOSFETs with isolated trench construction.
This MOSFET is dual transistor type with isolated configuration for better performance. Employs Trench MOSFET technology with enhancement mode channel operation. Compact 6-pin SC-88 surface mount package with dimensions 2.2mm length, 1.35mm width, and 1mm height.
Maximum drain-source resistance is 7.5 ohms ensuring efficient switching characteristics. Maximum power dissipation rating is 320mW allowing reliable operation at up to 150°C. Typical gate charge is low at 0.26nC improving switching efficiency.
Designed for automotive applications with AEC-Q101 qualification and operating temperature range from -55°C to +150°C. Suitable for electronic and power management applications requiring reliable P-channel MOSFETs. Explore the Electronics & Electricals category at EnvMart for more MOSFET dual transistors and Semiconductor components from leading brands such as Nexperia.
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