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Nexperia Dual P-Channel Isolated Trench MOSFET, 160mA, 50V, Enhancement Mode, 6-Pin SC-88 BSS84AKS,115

Category Semiconductor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.2mm
Model BSS84AKS,115
Width 1.35mm
Mount Type Surface
Series Trench MOSFET
Maximum Operating Temperature +150°C
Package Type SC-88
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 160mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 7.5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 320mW
Typical Gate Charge Qg @ Vgs 0.26nC
Maximum Gate Source Voltage Vgs -20, +20V
Transistor Configuration Isolated

Key Features

  • This MOSFET is dual transistor type with isolated configuration for better performance.
  • Employs Trench MOSFET technology with enhancement mode channel operation.
  • Compact 6-pin SC-88 surface mount package with dimensions 2.2mm length, 1.35mm width, and 1mm height.
  • Maximum drain-source resistance is 7.5 ohms ensuring efficient switching characteristics.
  • Maximum power dissipation rating is 320mW allowing reliable operation at up to 150°C.
  • Typical gate charge is low at 0.26nC improving switching efficiency.
  • Designed for automotive applications with AEC-Q101 qualification and operating temperature range from -55°C to +150°C.
  • Suitable for electronic and power management applications requiring reliable P-channel MOSFETs.

Product Description

Nexperia BSS84AKS,115 is a dual P-Channel isolated Trench MOSFET transistor designed for advanced electronic and power applications. It supports a maximum continuous drain current of 160mA and a maximum drain-source voltage of 50 volts, making it suitable for low power high-efficiency circuits.

This MOSFET features an enhancement mode channel and is configured with an isolated transistor design to prevent interference between elements. It is housed in a compact 6-pin SC-88 surface mount package, with precise physical dimensions of 2.2mm length, 1.35mm width, and 1mm height to accommodate dense board layouts.

With a drain-source resistance of 7.5Ω, it delivers reliable switching performance with maximum power dissipation rated at 320mW, allowing it to withstand operating temperatures up to 150°C. The typical gate charge of 0.26nC ensures efficient switching operations with low gate drive power.

The device is qualified to the automotive standard AEC-Q101 and can operate in temperature conditions ranging from -55°C to +150°C, ensuring robustness and suitability for automotive and industrial electronics environments.

This MOSFET transistor is ideal for applications in power management, signal switching, and electronic component designs demanding reliable dual P-channel MOSFETs with isolated trench construction.

This MOSFET is dual transistor type with isolated configuration for better performance. Employs Trench MOSFET technology with enhancement mode channel operation. Compact 6-pin SC-88 surface mount package with dimensions 2.2mm length, 1.35mm width, and 1mm height.

Maximum drain-source resistance is 7.5 ohms ensuring efficient switching characteristics. Maximum power dissipation rating is 320mW allowing reliable operation at up to 150°C. Typical gate charge is low at 0.26nC improving switching efficiency.

Designed for automotive applications with AEC-Q101 qualification and operating temperature range from -55°C to +150°C. Suitable for electronic and power management applications requiring reliable P-channel MOSFETs. Explore the Electronics & Electricals category at EnvMart for more MOSFET dual transistors and Semiconductor components from leading brands such as Nexperia.

Nexperia Dual P-Channel Isolated Trench MOSFET, 160mA, 50V, Enhancement Mode, 6-Pin SC-88 BSS84AKS,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 160mA.

It can handle a maximum drain-source voltage of 50V.

This MOSFET is housed in a compact 6-pin SC-88 surface mount package with dimensions of 2.2mm length, 1.35mm width, and 1mm height.

The maximum power dissipation rating is 320mW, allowing reliable operation at up to 150°C.

The typical gate charge is low at 0.26nC, which improves switching efficiency.

It operates within a temperature range of -55°C to +150°C.

Yes, it is qualified to the automotive standard AEC-Q101.

This model features an isolated transistor configuration.

The maximum drain-source resistance is 7.5Ω, ensuring efficient switching characteristics.

The channel type is P-Channel, designed for enhancement mode operation.

The maximum gate-source voltage is -20V to +20V.

It is suitable for electronic and power management applications requiring reliable P-channel MOSFETs.

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