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STMicroelectronics N-Channel Enhancement MOSFET, 5.5 A, 600 V, PowerFLAT 8-Pin, Surface Mount STL10N60M6
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 950μm |
| Length | 6mm |
| Model | STL10N60M6 |
| Width | 5mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerFLAT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 660mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 8.8nC |
| Maximum Gate Source Voltage Vgs | 25V |
| Forward Voltage Vf | 1.6V |
Key Features
- Maximum continuous drain current of 5.5 A supports moderate load operations.
- Drain-source voltage rated at 600 V for high-voltage applications.
- Enhancement-mode channel type provides efficient switching performance.
- PowerFLAT 8-pin surface mount package offers compact PCB design suitability.
- Low drain-source resistance (660 mΩ) minimizes conduction losses.
- Maximum power dissipation of 48 W supports thermal headroom.
- Gate-source voltage rating at 25 V ensures reliable gate control.
- Forward voltage of 1.6 V contributes to switching efficacy.
Product Description
STMicroelectronics STL10N60M6 is a high-performance N-Channel Enhancement MOSFET designed for efficient power switching in electronic circuits requiring medium current and high voltage capabilities. Its PowerFLAT 8-pin surface mount package enables space-saving on PCBs utilized in industrial and consumer electronics.
This device offers a maximum continuous drain current of 5.5 A and a drain-source voltage of 600 V, making it suitable for power supply, motor control, and power conversion applications. The low drain-source on-resistance of 660 mΩ improves efficiency by reducing conduction losses.
The MOSFET features enhanced switching characteristics with a maximum gate-source voltage of 25 V and a forward voltage of 1.6 V. It operates reliably within a broad temperature range from -55°C to 150°C, suitable for harsh industrial environments.
Typical gate charge of 8.8 nC at the gate voltage ensures fast switching speeds for pulse width modulation (PWM) control and other power management strategies. The compact PowerFLAT package with dimensions of 6 mm length, 5 mm width, and 950 µm height simplifies integration in space-constrained electronic devices.
Maximum continuous drain current: 5.5 A. Drain-source voltage: 600 V. Package type: PowerFLAT, 8-pin surface mount. Low on-resistance: 660 mΩ. Maximum power dissipation: 48 W. Gate-source voltage max: 25 V. Operating temperature range: -55°C to 150°C.
Typical gate charge: 8.8 nC.
This MOSFET targets use cases in industrial power electronics, motor drives, consumer power supplies, and other high voltage applications requiring reliable and efficient switching components.
Explore more STMicroelectronics power Semiconductors and related MOSFETs on EnvMart for your power management and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5.5 A, making it suitable for moderate load operations.
This MOSFET has a drain-source voltage rating of 600 V, which is suitable for high-voltage applications.
It comes in a PowerFLAT 8-pin surface mount package with dimensions of 6 mm in length, 5 mm in width, and 950 µm in height.
The maximum power dissipation for the STL10N60M6 is 48 W, providing adequate thermal headroom for operation.
The maximum gate-source voltage rating for this unit is 25 V, ensuring reliable gate control.
The typical gate charge at the gate voltage is 8.8 nC, which facilitates fast switching speeds.
This model operates reliably within a temperature range from -55°C to 150°C, suitable for harsh environments.
The low drain-source resistance of 660 mΩ minimizes conduction losses, enhancing overall efficiency during operation.
It features an N-channel enhancement mode, which provides efficient switching performance in electronic circuits.
This MOSFET is suitable for applications in power supply, motor control, and power conversion, among others.
The forward voltage for the STL10N60M6 is 1.6 V, contributing to its switching efficacy.
The PowerFLAT package of this MOSFET has 8 pins, facilitating its integration into electronic circuits.
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