$96.62
$93.72
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon Isolated F4 N-Channel MOSFET, 25 A Continuous Drain Current, 1200 V Drain Source Voltage F445MR12W1M1B76BPSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.4mm |
| Length | 62.8mm |
| Model | F445MR12W1M1B76BPSA1 |
| Width | 33.8mm |
| Series | F4 |
| Maximum Operating Temperature | 150°C |
| Package Type | AG-EASY2B |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | 60749 and 60068, IEC 60747 |
| Pin Count | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 45mΩ |
| Maximum Power Dissipation Pd | 20mW |
| Typical Gate Charge Qg @ Vgs | 0.062μC |
| Maximum Gate Source Voltage Vgs | 15V |
| Forward Voltage Vf | 5.65V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET has a maximum drain-source resistance of 45 milliohms, offering efficient conduction.
- It supports a maximum gate-source voltage of 15 volts for reliable switching.
- The transistor configuration is isolated, enhancing versatility in circuit design.
- It is capable of dissipating up to 20 milliwatts of power under normal operation.
- Operating temperature ranges from -40°C to 150°C, suitable for demanding industrial environments.
- The device complies with IEC 60747 and standards 60749 and 60068, ensuring quality and reliability.
- Physical dimensions are 62.8 mm length, 33.8 mm width, and 16.4 mm height.
- Typical gate charge at Vgs is 0.062 microcoulombs, aiding in low switching losses.
Product Description
Infineon F445MR12W1M1B76BPSA1 Isolated F4 N-Channel MOSFET is engineered for high-performance power switching applications operating at 1200 V drain-source voltage and 25 A continuous drain current. Packaged with 2 pins in the AG-EASY2B format, this device ensures reliable electrical isolation and ease of integration in industrial, laboratory, and power electronics assemblies.
The MOSFET features a low maximum drain-source resistance of 45 milliohms, which optimizes efficiency by minimizing conduction losses. It supports a maximum gate-source voltage of 15 V and offers a gate charge of 0.062 μC, enabling fast and efficient switching for power conversion systems.
Designed to withstand harsh environments, this component operates reliably within the temperature range of -40°C to 150°C. Compliance with IEC 60747 and standards 60749 and 60068 certifies its robustness in industrial and commercial electronic designs.
Its isolated transistor configuration and compact dimensions of 62.8 mm length by 33.8 mm width and 16.4 mm height make it suitable for a variety of applications including power inverters, motor drives, and renewable energy systems requiring durable, high-voltage switching elements.
This MOSFET has a maximum drain-source resistance of 45 milliohms for energy-efficient operation. Maximum gate-source voltage rating is 15 V, supporting protection and control. Power dissipation capacity is rated at 20 milliwatts, suitable for compact electronic assemblies.
Operating temperature range from -40°C to 150°C enables deployment in industrial environments. Package type AG-EASY2B provides convenient assembly on PCBs. Standards compliance includes IEC 60747, 60749, and 60068 for quality assurance.
Physical dimensions of 62.8 mm x 33.8 mm x 16.4 mm meet compact design requirements.
This product is ideal for semiconductor applications in power electronics, industrial automation, and electronic component manufacturing. Available exclusively from trusted suppliers, it represents reliable performance for designers and engineers seeking high-voltage MOSFET solutions.
Explore more Semiconductor and MOSFET products at EnvMart for comprehensive industrial and electronics components procurement.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
This device has a maximum drain-source voltage rating of 1200 V.
The maximum gate-source voltage supported by this MOSFET is 15 V.
The physical dimensions of this MOSFET are 62.8 mm in length, 33.8 mm in width, and 16.4 mm in height.
The maximum drain-source resistance for this MOSFET is 45 milliohms.
This MOSFET operates within a temperature range of -40°C to 150°C.
The typical gate charge at Vgs for this MOSFET is 0.062 microcoulombs.
The power dissipation capacity of this model is rated at 20 milliwatts.
This MOSFET complies with IEC 60747 and standards 60749 and 60068.
The package type for this model is AG-EASY2B, which allows for convenient assembly on PCBs.
This device has 2 pins in its configuration.
This MOSFET features an isolated transistor configuration, enhancing its versatility in circuit design.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$113.99
$110.57
-3%
New
$0.06
$0.06
-3%
New
$96.62
$93.72
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent