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ROHM N-Channel IGBT, 30 A 650 V, 3-Pin TO-247N Through Hole Semiconductor RGW60TS65CHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGW60TS65CHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 178W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- Built in a 3-pin TO-247N package with through hole mount.
- Maximum power dissipation of 178 watts supports high-power applications.
- High-speed switching capability up to 1 MHz enhances efficiency.
- Wide operating temperature range from -40°C to 175°C ensures reliability.
- Low collector emitter saturation voltage of 1.9V reduces power loss.
- Rated for maximum gate emitter voltage of ±30 volts.
- Compliant with RoHS directives and features Pb-free lead plating.
- AEC-Q101 automotive standard qualified for automotive and industrial use.
Product Description
ROHM RGW60TS65CHRC11 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for industrial and automotive semiconductor applications. It features a collector emitter voltage rating of 650 volts and a continuous collector current of 30 amperes, packaged in a 3-pin TO-247N through hole mounting configuration.
This device offers a maximum power dissipation of 178 watts and supports switching speeds up to 1 MHz, which contribute to enhanced efficiency and reduced switching losses. Its operating temperature range from -40°C to 175°C allows operation in harsh environments, suitable for automotive systems and industrial inverters.
The RGW60TS65CHRC11 has a low collector emitter saturation voltage (VceSAT) of 1.9 volts to minimize conduction losses and operates with a maximum gate emitter voltage of ±30 volts, ensuring device robustness and reliability.
3-pin TO-247N package with through hole mounting provides robust mechanical stability. AEC-Q101 qualification certifies suitability for automotive applications. Pb-free lead plating and RoHS compliance support environmentally friendly manufacturing.
Optimized for use in DC-DC converters, power factor correction circuits, and industrial inverter systems. This IGBT is ideal for demanding industrial, automotive, and power management applications, delivering reliable performance and energy efficiency.
Explore EnvMart’s extensive selection of electronic components, including discrete Semiconductors and power transistors, to find complementary products for your design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 30 amperes.
It has a collector emitter voltage rating of 650 volts.
The maximum power dissipation is 178 watts, supporting high-power applications.
This IGBT is designed for through hole mounting in a 3-pin TO-247N package.
The maximum gate emitter voltage is ±30 volts.
The low collector emitter saturation voltage is 1.9 volts, which helps reduce power loss.
Yes, it is qualified under the AEC-Q101 automotive standard, suitable for automotive applications.
This model features a pin count of 3.
The country of origin for this product is India.
The channel type of this model is N-channel.
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