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Microchip N-Channel Enhancement Mode MOSFET, 200 mA Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin 2N7000-G

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Microchip N-Channel Enhancement Mode MOSFET, 200 mA Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin 2N7000-G

Name: Microchip N-Channel Enhancement Mode MOSFET, 200 mA Continuous Drain Current, 60 V Drain Source Voltage, 3-Pin 2N7000-G
Brand: Microchip
SKU: 399310
Price: 0.45 USD
Availability: InStock

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Category Semiconductor Brand Microchip Condition New

Specifications

Country of Origin	Taiwan
Brand	Microchip
Height	5.33mm
Length	5.08mm
Model	2N7000-G
Width	4.06mm
Mount Type	Through Hole
Series	2N7000
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
ANSI/ESD S20.20	2014
BS EN 61340-5-1	2007
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5.3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1W
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	850mV
Drivers	relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc

Key Features

Enhancement mode N-channel MOSFET with 200 mA continuous drain current.
Maximum drain-source voltage rating of 60 V in a TO-92 package.
Low drain-source resistance of 5.3 ohms at 10 V gate-source voltage.
Maximum gate-source voltage rating is 30 V for robust operation.
Capable of dissipating 1 W power with wide temperature range (-55°C to 150°C).
Integral source-drain diode provides improved efficiency and protection.
Low input capacitance allows fast switching speeds.
Complies with ANSI/ESD S20.20 and BS EN 61340-5-1 standards.

Product Description

Microchip 2N7000-G is a high-performance N-channel enhancement mode MOSFET packaged in a 3-pin TO-92 through-hole mount. It offers a continuous drain current of 200 mA and a maximum drain-source voltage of 60 V, making it suitable for various electronic applications including amplifiers, power supply circuits, drivers, and motor controls.

This device features a vertical DMOS structure ensuring excellent thermal stability and preventing thermal runaway. The low 5.3 ohm drain-source resistance at 10 V gate voltage minimizes conduction losses, enhancing efficiency. Operating temperature range spans from -55°C to 150°C for robust performance even in demanding environments.

Additional features include a maximum gate-source voltage rating of 30 V, internal source-drain diode for protection, low input capacitance, and fast switching capabilities. These characteristics make it ideal for switching and amplification tasks in industrial and commercial electronic circuits.

The compact TO-92 package measures 5.08 mm in length, 4.06 mm in width, and 5.33 mm in height, facilitating easy through-hole PCB mounting. The MOSFET complies with ANSI/ESD S20.20:2014 and BS EN 61340-5-1:2007 standards, ensuring reliable operation in electrostatically sensitive environments.

Applications include amplifiers, converters, relay and solenoid drivers, motor controllers, and various power management circuits where efficient switching and thermal stability are critical.

Excellent thermal stability prevents secondary breakdown. High input impedance and gain enable sensitive control. Integral source-drain diode supports switching efficiency. Low CISS capacitance ensures fast switching speeds.

Robust power dissipation capability of 1 W. Range of operating temperatures from -55°C to 150°C. Compliance with industry-standard ESD protection norms. Compact and easy-to-mount TO-92 package. Suitable for industrial, laboratory, and consumer electronic applications.

Explore EnvMart for more Microchip Semiconductor components and MOSFET devices optimized for your electronic system needs.