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| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 0.8mm |
| Length | 2.4mm |
| Model | SSM3J338R,LF(T |
| Width | 2.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 26.3mΩ |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 19.5nC |
| Maximum Gate Source Voltage Vgs | 10V |
| Forward Voltage Vf | 0.75V |
Toshiba SSM3J338R,LF(T is a high-performance P-Channel MOSFET transistor designed primarily for power management and switching applications. This device supports continuous drain currents up to 6 amps and a maximum drain-source voltage of 12 volts, making it suitable for controlling moderate power loads in various electronic circuits.
Housed in a compact 3-pin SOT-23 surface mount package measuring 2.4 mm in length, 2.9 mm in width, and 0.8 mm in height, it allows dense PCB layouts and efficient assembly processes. Operating temperature ranges from -55°C to 150°C enable reliable use in harsh and dynamic industrial environments.
The MOSFET features a low maximum drain-source resistance of 26.3 milliohms, enabling efficient power conduction with minimal losses. Its forward voltage of 0.75 volts contributes to energy efficiency, and the typical gate charge of 19.5 nanoCoulombs ensures fast switching performance while maintaining thermal stability with a 2-watt power dissipation rating.
Maximum gate-source voltage tolerance of 10 volts guarantees strong gate control without device damage. Although it does not conform to specific automotive standards or approvals, it is well suited for general industrial, laboratory, and commercial electronics requiring precise P-channel MOSFET switching.
Maximum continuous drain current of 6 amperes suitable for power management applications. Low on-resistance of 26.3 milliohms ensures efficient conduction. Compact SOT-23 package supports surface mounting. Wide operating temperature range from -55°C to 150°C for stable operation.
Maximum power dissipation of 2 watts for moderate power applications. Forward voltage drop of 0.75 volts for energy efficiency. Maximum gate-source voltage of ±10 volts to ensure safe switching. Typical gate charge of 19.5 nanoCoulombs for fast switching.
No automotive standard certifications; intended for standard electronic applications. Designed for power management and switching in industrial and commercial electronic devices.
This P-Channel MOSFET is recommended for use in power supplies, DC-DC converters, and general purpose switching circuits in electronics manufacturing and repair environments. It supports efficient integration into compact PCBs and is compatible with automated surface-mount assembly processes.
Explore more Toshiba MOSFETs and related semiconductor products in the Electronics & Electricals category on EnvMart for your industrial and commercial application needs.
Explore more products in our Power MOSFET category.
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