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Toshiba P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Surface Mount SSM3J338R,LF(T

Category Power MOSFET Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Height 0.8mm
Length 2.4mm
Model SSM3J338R,LF(T
Width 2.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 6A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 26.3mΩ
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 19.5nC
Maximum Gate Source Voltage Vgs 10V
Forward Voltage Vf 0.75V

Key Features

  • Maximum continuous drain current of 6 amperes suitable for power management applications.
  • Low on-resistance of 26.3 milliohms ensures efficient conduction.
  • Compact SOT-23 package with dimensions 2.4 mm x 2.9 mm x 0.8 mm supports surface mounting.
  • Operates at temperatures ranging from -55°C to 150°C for robust performance in varying environments.
  • Maximum power dissipation of 2 watts suitable for moderate power loads.
  • Forward voltage drop of 0.75 volts minimizing energy loss during switching.
  • Rated maximum gate-source voltage of ±10 V for stable control.
  • Typical gate charge of 19.5 nanoCoulombs at Vgs ensures efficient switching speed.

Product Description

Toshiba SSM3J338R,LF(T is a high-performance P-Channel MOSFET transistor designed primarily for power management and switching applications. This device supports continuous drain currents up to 6 amps and a maximum drain-source voltage of 12 volts, making it suitable for controlling moderate power loads in various electronic circuits.

Housed in a compact 3-pin SOT-23 surface mount package measuring 2.4 mm in length, 2.9 mm in width, and 0.8 mm in height, it allows dense PCB layouts and efficient assembly processes. Operating temperature ranges from -55°C to 150°C enable reliable use in harsh and dynamic industrial environments.

The MOSFET features a low maximum drain-source resistance of 26.3 milliohms, enabling efficient power conduction with minimal losses. Its forward voltage of 0.75 volts contributes to energy efficiency, and the typical gate charge of 19.5 nanoCoulombs ensures fast switching performance while maintaining thermal stability with a 2-watt power dissipation rating.

Maximum gate-source voltage tolerance of 10 volts guarantees strong gate control without device damage. Although it does not conform to specific automotive standards or approvals, it is well suited for general industrial, laboratory, and commercial electronics requiring precise P-channel MOSFET switching.

Maximum continuous drain current of 6 amperes suitable for power management applications. Low on-resistance of 26.3 milliohms ensures efficient conduction. Compact SOT-23 package supports surface mounting. Wide operating temperature range from -55°C to 150°C for stable operation.

Maximum power dissipation of 2 watts for moderate power applications. Forward voltage drop of 0.75 volts for energy efficiency. Maximum gate-source voltage of ±10 volts to ensure safe switching. Typical gate charge of 19.5 nanoCoulombs for fast switching.

No automotive standard certifications; intended for standard electronic applications. Designed for power management and switching in industrial and commercial electronic devices.

This P-Channel MOSFET is recommended for use in power supplies, DC-DC converters, and general purpose switching circuits in electronics manufacturing and repair environments. It supports efficient integration into compact PCBs and is compatible with automated surface-mount assembly processes.

Explore more Toshiba MOSFETs and related semiconductor products in the Electronics & Electricals category on EnvMart for your industrial and commercial application needs.

Explore more products in our Power MOSFET category.

Toshiba P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Surface Mount SSM3J338R,LF(T
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Frequently Asked Questions

The maximum continuous drain current of this model is 6 amperes, suitable for power management applications.

This P-Channel MOSFET has a maximum drain-source voltage of 12 volts.

The SOT-23 package measures 2.4 mm in length, 2.9 mm in width, and 0.8 mm in height.

It operates within a temperature range of -55°C to 150°C, allowing for use in various environments.

The maximum power dissipation is rated at 2 watts, making it suitable for moderate power loads.

The forward voltage drop is 0.75 volts, which helps minimize energy loss during switching.

The typical gate charge at Vgs is 19.5 nanoCoulombs, ensuring efficient switching speed.

This model supports surface mounting, which is compatible with automated assembly processes.

The maximum gate-source voltage is ±10 volts, ensuring stable control without damaging the device.

It is recommended for use in power supplies, DC-DC converters, and general-purpose switching circuits.

The maximum drain-source resistance is 26.3 milliohms, enabling efficient power conduction.

This P-Channel MOSFET has a pin count of 3, suitable for compact PCB layouts.

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