onsemi SiC Power N-Channel MOSFET 203 A 100 V Enhancement 7-Pin TO-263 NTBGS004N10G

onsemi NTBGS004N10G is a Silicon Carbide (SiC) Power N-Channel MOSFET designed for high current and voltage applications. It supports a maximum continuous drain current of 203 A and maximum drain-source voltage of 100 V in a compact 7-pin TO-263 surface mount package. The device features enhancement mode channel operation with a low maximum drain-source resistance of 4.1 milliohms, enabling efficient power switching with reduced conduction losses.

This MOSFET exhibits rugged technology tailored for utmost reliability and is suitable for wide Safe Operating Area (SOA) applications, especially from a 48V bus environment. It is hot swap tolerant, providing robustness for industrial or automotive power electronics circuits. The unit supports a maximum power dissipation of 240 W and operates effectively in temperature ranges from -55°C to 175°C, making it appropriate for demanding environments.

Device characteristics include a typical gate charge of 178 nC at the specified gate-source voltage and a maximum gate-source voltage rating of 20 V, providing reliable gate control. The forward voltage drop is 1.2 V typical, contributing to energy efficiency of the overall system.

The physical dimensions of the component are 10.2 mm length, 4.7 mm width, and 9.4 mm height, fitting standard PCB footprints designed for TO-263 packages. It is RoHS compliant, aligning with environmental and safety standards.

This MOSFET is widely used in industrial power electronics, automotive power management, HVAC controls, manufacturing equipment, and other electronic semiconductor applications requiring high current and voltage capability with reliable switching performance.

Offers rugged technology engineered for utmost reliability. Designed specifically for wide Safe Operating Area (SOA) applications from a 48 V bus. Features hot swap tolerance with superior SOA curve. Reduces conduction losses for improved efficiency.

ROHS compliant for environmental safety compliance. Surface mount package with 7 pins for compact board integration. Supports maximum power dissipation up to 240 W. Operates reliably between -55°C and 175°C. Enhancement mode N-channel device with 4.1 milliohm maximum drain-source resistance.

Typical gate charge of 178 nC at gate-source voltage. Maximum gate-source voltage rating of 20 V for safe control operation. Explore a wide range of power semiconductor solutions within EnvMart for industrial and commercial applications.

Explore more products in our Power MOSFET category.