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Vishay SQ Rugged N-Channel TrenchFET Power MOSFET, 25 A Continuous Drain Current, 60 V, TO-252 Package SQD25N06-22L_GE3

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 2.38mm
Length 6.73mm
Model SQD25N06-22L_GE3
Width 6.22mm
Mount Type PCB
Series SQ Rugged
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 25A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 0.022Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 62W
Typical Gate Charge Qg @ Vgs 50nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Maximum continuous drain current of 25 A for robust power handling.
  • Drain-source voltage rating of 60 V suitable for various applications.
  • Compact TO-252 3-pin package enables easy PCB mounting.
  • Low on-resistance of 0.022 ohms reduces power loss.
  • Enhancement mode operation for efficient switching.
  • Typical gate charge of 50 nC supports fast switching.
  • Junction temperature rating up to 175°C for durable use.
  • Maximum power dissipation of 62 W for demanding loads.

Product Description

Vishay SQD25N06-22L_GE3 is a high-performance N-Channel TrenchFET Power MOSFET engineered for automotive and industrial electronics applications demanding durability, efficiency, and reliability.

This device supports a continuous drain current of 25 A and a drain-source voltage rating of 60 V, packaged in a compact TO-252 (DPAK) with 3 pins facilitating convenient assembly on printed circuit boards.

The MOSFET features enhancement-mode operation with a low maximum drain-source resistance of 0.022 ohms, providing high efficiency and minimal conduction losses during operation. Typical gate charge of 50 nC at rated gate voltage ensures rapid switching performance suitable for power management circuits.

Engineered for high junction temperature operations up to 175°C, this MOSFET delivers reliable performance under demanding thermal conditions. Its maximum power dissipation of 62 W enables support for power-intensive automotive or industrial loads.

Conformance to IEC 61249-2-21 and RoHS 2002/95/EC environmental standards guarantees quality and eco-friendly manufacturing processes. The device carries the AEC-Q101 automotive qualification standard, allowing it to withstand harsh automotive operating environments.

Additional electrical characteristics include a forward voltage drop of 1.5 V and a maximum gate-source voltage of ±20 V, ensuring device safety and operational stability. The device supports robust mounting on PCB platforms using the TO-252 package.

Its compact dimensions (6.73 mm length, 6.22 mm width, 2.38 mm height) enable efficient board space utilization. Applications include automotive power management systems, industrial motor drives, and power conversion units.

Designed to meet industrial and automotive reliability requirements, making it ideal for harsh environments. This MOSFET is a vital component for enhancing power efficiency and durability in modern electronic circuitry. Explore the range of Vishay discretes and power semiconductors available at EnvMart for your industrial and automotive electronic design needs.

Vishay SQ Rugged N-Channel TrenchFET Power MOSFET, 25 A Continuous Drain Current, 60 V, TO-252 Package SQD25N06-22L_GE3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SQD25N06-22L_GE3 is 25 A.

This MOSFET has a drain-source voltage rating of 60 V.

It is packaged in a compact TO-252 (DPAK) format with 3 pins for easy PCB mounting.

The typical gate charge is 50 nC at the rated gate voltage.

The dimensions of this model are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

It can handle a maximum power dissipation of 62 W.

The maximum operating temperature is rated at 175°C.

This model complies with the AEC-Q101 automotive standard.

The maximum gate-source voltage is ±20 V.

It is an N-Channel TrenchFET power MOSFET.

The forward voltage drop is 1.5 V.

The minimum operating temperature is -55°C.

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