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ROHM N-Channel Power MOSFET 10.3 A 60 V Surface Mount 8-Pin HUML2020L8 RF4L070BGTCR
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RF4L070BGTCR |
| Mount Type | Surface Mount |
| Series | RF4L |
| Maximum Operating Temperature | 175°C |
| Package Type | HUML2020L8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 2.7mΩ |
| Channel Mode | N |
| Maximum Power Dissipation Pd | 81W |
| Typical Gate Charge Qg @ Vgs | 7.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low on resistance of 2.7 mΩ reduces power losses efficiently.
- Designed for surface mount with 8-pin configuration for easy PCB integration.
- Maximum power dissipation rated at 81 W for high-performance applications.
- Wide operating temperature range from -55°C to 175°C ensures reliability.
- Maximum gate-source voltage of 20 V with a typical gate charge of 7.6 nC.
- Forward voltage of 1.2 V supports efficient switching operations.
- RoHS compliant and halogen free, meeting modern environmental standards.
- Suitable for industrial, automotive, and power management applications.
Product Description
ROHM RF4L070BGTCR is a high-performance N-Channel Power MOSFET designed for efficient switching and power management with a maximum continuous drain current of 10.3 A and maximum drain-source voltage of 60 V. It comes in an HUML2020L8 surface mount package with 8 pins, allowing for compact and versatile PCB layout.
The device offers a low drain-source resistance of 2.7 mΩ, significantly reducing conduction losses and improving overall efficiency. It can dissipate up to 81 W of power, making it suitable for demanding industrial and automotive power applications, including motor drives, DC-DC converters, and power supplies.
Operating reliably at temperatures from -55°C to 175°C, this MOSFET ensures durability and stability in harsh environments. It features a maximum gate-source voltage rating of 20 V, with a typical gate charge of 7.6 nC, supporting fast switching speeds and low gate drive power.
The forward voltage of 1.2 V supports smooth operation in switching circuits. The ROHM RF4L070BGTCR is RoHS compliant, halogen free, and designed to meet industry standards for environmental and safety requirements.
Low on resistance minimizes power loss during operation. Compact surface mount 8-pin package enhances design flexibility. High power dissipation capacity for industrial uses. Wide operating temperature range for stability in extreme conditions.
Gate charge optimized for low power gate drive and fast switching. Environmentally friendly RoHS compliance and halogen free construction. Applicable for automotive and industrial power control applications.
This discrete semiconductor device is ideal for electronic design projects requiring efficient, reliable power switching solutions. The product allows engineers to optimize their systems for energy efficiency and thermal management.
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Frequently Asked Questions
The maximum continuous drain current for this model is 10.3 A.
This power MOSFET has a maximum drain-source voltage rating of 60 V.
It can dissipate up to 81 W of power, making it suitable for high-performance applications.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage for this model is 20 V.
The typical gate charge is 7.6 nC, which supports efficient switching operations.
The forward voltage is 1.2 V, aiding in efficient switching performance.
This device comes in an 8-pin configuration, suitable for surface mount applications.
It uses the HUML2020L8 package type, designed for compact PCB integration.
Yes, it is RoHS compliant and halogen free, meeting modern environmental standards.
This MOSFET is suitable for industrial, automotive, and power management applications, including motor drives and DC-DC converters.
The country of origin for this MOSFET is India.
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