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| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD15N65M5 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | MDmesh M5 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 710V |
| Maximum Drain Source Resistance Rds | 340mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 85W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
STMicroelectronics STD15N65M5 is a high-performance N-channel MDmesh M5 power MOSFET tailored for demanding power factor correction (PFC) and pulse width modulation (PWM) topologies. Featuring a maximum continuous drain current of 11 amperes and a drain-source voltage rating of 710 volts, this enhancement-mode MOSFET offers efficient low on-state losses and low gate charge, optimized for energy-conscious applications.
Housed in a compact 3-pin TO-252 surface-mount package with dimensions of 6.6mm length, 6.2mm width, and 2.4mm height, it enables reliable thermal handling with up to 85 watts of power dissipation. The device operates over a broad temperature range from -55°C to 150°C, suitable for harsh industrial environments.
This MOSFET's typical gate charge of 22 nanocoulombs and maximum gate-source voltage of ±25 volts ensure fast switching performance with robust protection. With a forward voltage drop of 1.5 volts, the device supports efficient operation in power electronics circuits.
Applications include solar power converters, consumer product power supplies, electronic lighting controls, and other industrial and commercial power management systems requiring compact and reliable hard switching components.
Offers low on-state losses and low gate charge per silicon area. Designed for energy-conscious industrial and commercial power electronics. Robust thermal performance supporting up to 85 watts dissipation. Compact TO-252 surface-mount package facilitates PCB layout.
Wide operating temperature supports demanding environmental conditions. High voltage rating of 710 volts for reliable power switching. Typical gate charge of 22 nanocoulombs ensures efficient switching. Maximum gate-source voltage tolerance of ±25 volts prevents damage.
Suitable for PFC and PWM topologies in power control applications. Manufactured under strict quality standards in China. Explore more Power MOSFET components and semiconductor devices in the Electronics & Electricals category on EnvMart to meet diverse industrial application needs.
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