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STMicroelectronics MDmesh M5 N-Channel MOSFET 11A 710V Enhancement 3-Pin TO-252 STD15N65M5

Category Power MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin China
Brand STMicroelectronics
Height 2.4mm
Length 6.6mm
Model STD15N65M5
Width 6.2mm
Mount Type Surface
Series MDmesh M5
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 11A
Maximum Drain Source Voltage Vds 710V
Maximum Drain Source Resistance Rds 340mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 85W
Typical Gate Charge Qg @ Vgs 22nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf 1.5V

Key Features

  • This MOSFET device features a maximum continuous drain current of 11 amperes.
  • It supports a maximum drain-source voltage of 710 volts for reliable performance.
  • Package type is TO-252 with surface mount and 3 pins for easy PCB integration.
  • Maximum power dissipation rating is 85 watts ensuring thermal stability.
  • It operates within a temperature range from -55°C to 150°C.
  • Channel mode is enhancement with a forward voltage of 1.5 volts.
  • Typical gate charge at Vgs is 22 nanocoulombs providing efficient switching.
  • Maximum gate-source voltage rating is ±25 volts to prevent damage.

Product Description

STMicroelectronics STD15N65M5 is a high-performance N-channel MDmesh M5 power MOSFET tailored for demanding power factor correction (PFC) and pulse width modulation (PWM) topologies. Featuring a maximum continuous drain current of 11 amperes and a drain-source voltage rating of 710 volts, this enhancement-mode MOSFET offers efficient low on-state losses and low gate charge, optimized for energy-conscious applications.

Housed in a compact 3-pin TO-252 surface-mount package with dimensions of 6.6mm length, 6.2mm width, and 2.4mm height, it enables reliable thermal handling with up to 85 watts of power dissipation. The device operates over a broad temperature range from -55°C to 150°C, suitable for harsh industrial environments.

This MOSFET's typical gate charge of 22 nanocoulombs and maximum gate-source voltage of ±25 volts ensure fast switching performance with robust protection. With a forward voltage drop of 1.5 volts, the device supports efficient operation in power electronics circuits.

Applications include solar power converters, consumer product power supplies, electronic lighting controls, and other industrial and commercial power management systems requiring compact and reliable hard switching components.

Offers low on-state losses and low gate charge per silicon area. Designed for energy-conscious industrial and commercial power electronics. Robust thermal performance supporting up to 85 watts dissipation. Compact TO-252 surface-mount package facilitates PCB layout.

Wide operating temperature supports demanding environmental conditions. High voltage rating of 710 volts for reliable power switching. Typical gate charge of 22 nanocoulombs ensures efficient switching. Maximum gate-source voltage tolerance of ±25 volts prevents damage.

Suitable for PFC and PWM topologies in power control applications. Manufactured under strict quality standards in China. Explore more Power MOSFET components and semiconductor devices in the Electronics & Electricals category on EnvMart to meet diverse industrial application needs.

STMicroelectronics MDmesh M5 N-Channel MOSFET 11A 710V Enhancement 3-Pin TO-252 STD15N65M5
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Frequently Asked Questions

The maximum continuous drain current of this model is 11 amperes.

It supports a maximum drain-source voltage of 710 volts.

This MOSFET is housed in a TO-252 surface-mount package.

The dimensions of the package are 6.6mm in length, 6.2mm in width, and 2.4mm in height.

The maximum power dissipation rating for this unit is 85 watts.

It operates within a temperature range from -55°C to 150°C.

The typical gate charge at Vgs is 22 nanocoulombs.

The maximum gate-source voltage rating is ±25 volts.

The forward voltage drop is 1.5 volts.

This MOSFET operates in enhancement mode.

It is suitable for applications such as solar power converters, consumer product power supplies, and electronic lighting controls.

The maximum drain-source resistance is 340 milliohms.

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