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IXYS HiperFET N-Channel MOSFET 24 A 1 kV Enhancement Mode 4-Pin SOT-227 IXFN24N100
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.23mm |
| Model | IXFN24N100 |
| Width | 25.42mm |
| Mount Type | Panel |
| Series | HiperFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 390mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 568W |
| Typical Gate Charge Qg @ Vgs | 267nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for high power dissipation up to 568 W.
- Features enhancement mode channel for efficient switching.
- Operates reliably from -55°C up to 150°C.
- Maximum drain-source resistance of 390 milliohms ensures low conduction losses.
- Typical gate charge at 267 nC enables responsive gate control.
- Maximum gate-source voltage ±20 V ensures stable operation.
- Compatible with panel mount applications in power electronics.
- Ideal for industrial and commercial electronic systems.
Product Description
IXYS IXFN24N100 is a high-performance N-Channel Power MOSFET from the HiperFET series, designed for power electronics demanding efficient, high-current switching.
This device supports a maximum continuous drain current of 24 A and a maximum drain-source voltage rating of 1 kV, making it suitable for industrial, power management, and converter applications requiring robust transistor performance.
Packaged in a compact 4-pin SOT-227 panel-mount form factor, the MOSFET offers a maximum power dissipation of 568 W, enabling reliable operation in thermal demanding environments ranging from -55°C to 150°C. Its enhancement mode channel ensures efficient switching behavior.
The device features a maximum drain-source resistance (Rds) of 390 milliohms, minimizing conduction losses and improving energy efficiency. With a typical gate charge of 267 nC at Vgs, gate control is responsive and precise. The maximum gate-source voltage rating of ±20 V protects the MOSFET during switching conditions.
Physical dimensions are 38.23 mm in length, 25.42 mm in width, and 9.6 mm in height, accommodating panel mount integration in various power electronic assemblies. This MOSFET is not certified for automotive standards but is well-suited for industrial, manufacturing, power control, and electronic component manufacturing applications.
Designed for high power dissipation up to 568 W. Features enhancement mode channel for efficient switching. Operates reliably from -55°C up to 150°C. Maximum drain-source resistance of 390 milliohms ensures low conduction losses.
Typical gate charge at 267 nC enables responsive gate control. Maximum gate-source voltage ±20 V ensures stable operation. Compact dimensions: Length 38.23 mm, Width 25.42 mm, Height 9.6 mm. Compatible with panel mount applications in power electronics.
Ideal for industrial and commercial electronic systems. Explore more discrete semiconductors and power MOSFETs at EnvMart for your industrial and commercial power management needs.
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Frequently Asked Questions
The IXFN24N100 has a maximum continuous drain current of 24 A.
This model supports a maximum drain-source voltage rating of 1 kV.
The maximum power dissipation for this MOSFET is 568 W.
The physical dimensions are 38.23 mm in length, 25.42 mm in width, and 9.6 mm in height.
It operates reliably at a maximum temperature of 150°C.
The minimum operating temperature for this model is -55°C.
The maximum drain-source resistance (Rds) is 390 milliohms.
The typical gate charge at Vgs is 267 nC.
The maximum gate-source voltage rating is ±20 V.
This model features an enhancement mode N-channel.
The IXFN24N100 is designed for panel mount applications.
It is suitable for industrial, power management, and converter applications requiring robust transistor performance.
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