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IXYS HiperFET Polar N-Channel Power MOSFET, 115 A Continuous Drain Current, 200 V Drain Source Voltage, 680 W IXFN140N20P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.6mm |
| Length | 38.23mm |
| Model | IXFN140N20P |
| Width | 25.42mm |
| Mount Type | Panel |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-227 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 115A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 680W |
| Typical Gate Charge Qg @ Vgs | 240nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 115 amperes ensures high power handling capacity.
- Drain to source voltage rating of 200 volts supports robust switching environments.
- Enhanced MOSFET channel type with enhancement mode operation for efficient switching.
- Low maximum drain-source resistance of 18 milliohms reduces conduction losses.
- High power dissipation capacity of 680 watts for effective heat management.
- Wide temperature operating range from -55°C to 175°C for reliability in harsh environments.
- Compact 4-pin SOT-227 package simplifies mounting and integration on panels.
- Typical gate charge of 240 nanocoulombs for fast switching capabilities.
Product Description
IXYS IXFN140N20P is a high-performance N-Channel Power MOSFET from the HiperFET Polar series designed for industrial and electronic power management applications. It supports a continuous drain current of 115 amperes and can withstand a maximum drain-source voltage of 200 volts, making it suitable for high power switching and amplification tasks.
This MOSFET features an enhancement mode channel and low on-resistance of 18 milliohms, ensuring improved energy efficiency and reduced thermal losses. Its power dissipation rating of 680 watts enables the device to handle demanding workloads with effective heat dissipation.
Constructed in a robust 4-pin SOT-227 package with panel mount capability, the IXFN140N20P allows for easy installation in various power systems. The device operates reliably over a broad temperature range from -55°C to 175°C, suitable for both standard and extreme environmental conditions.
Additional technical characteristics include a typical gate charge of 240 nanocoulombs for rapid switching, gate voltage protection rated between -20 and +20 volts, and a forward voltage drop of 1.5 volts to minimize conduction losses.
This Power MOSFET is ideal for applications in industrial automation, power supplies, motor control, and other electronic equipment requiring efficient high-power switching. Maximum continuous drain current of 115 A. Maximum drain-source voltage of 200 V.
Low on-resistance of 18 mΩ for efficient conduction. Power dissipation of 680 W suitable for demanding applications. Wide operating temperature range from -55°C to 175°C. 4-pin SOT-227 package, panel mount type. Typical gate charge of 240 nC facilitates fast switching.
Gate voltage rating of -20 V to +20 V for protection. Forward voltage of 1.5 V reduces power losses. Explore further Power MOSFET options in the Electronics & Electricals category at EnvMart for your industrial and commercial needs.
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Frequently Asked Questions
The IXFN140N20P has a maximum continuous drain current of 115 amperes, allowing it to handle high power applications effectively.
This model supports a maximum drain-source voltage of 200 volts, making it suitable for robust switching environments.
The MOSFET features a low maximum drain-source resistance of 18 milliohms, which helps reduce conduction losses during operation.
It has a power dissipation capacity of 680 watts, allowing it to manage demanding workloads effectively.
The IXFN140N20P operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for various environmental conditions.
This model is constructed in a compact 4-pin SOT-227 package, which simplifies mounting and integration into power systems.
The typical gate charge is 240 nanocoulombs, facilitating fast switching capabilities in applications.
The maximum gate-source voltage rating for this model is between -20 volts and +20 volts, providing protection during operation.
The forward voltage drop is 1.5 volts, which helps minimize conduction losses in the circuit.
It features an enhancement mode N-channel type, which is designed for efficient switching applications.
The dimensions of the IXFN140N20P are 38.23 mm in length, 25.42 mm in width, and 9.6 mm in height.
This MOSFET is suitable for applications in industrial automation, power supplies, and motor control, among others that require high-power switching.
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