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STMicroelectronics N-Channel IGBT 10 A 600 V 3-Pin TO-220 Through Hole STGP5H60DF
Specifications
| Country of Origin | China |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STGP5H60DF |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | Trench Gate Field Stop |
| Energy Rating | 221mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 10A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.95V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 88W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- The IGBT combines MOSFET gate drive ease with bipolar transistor current handling and low saturation voltage.
- This device supports a maximum collector current of 10 A at continuous operation.
- The maximum collector-emitter voltage rating is 600 V ensuring operation in high voltage applications.
- Power dissipation capability is rated up to 88 W for efficient thermal management.
- It features a switching speed of 1 MHz for fast response and switching in power circuits.
- Operating temperature ranges from -55°C to 175°C, suitable for diverse industrial environments.
- The package height is 9.15 mm with dimensions length 10.4 mm and width 4.6 mm.
- Designed with trench gate field stop technology to optimize performance.
Product Description
STMicroelectronics STGP5H60DF is a high-efficiency N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications. It combines the simple gate-drive characteristics of MOSFETs with the high-current capacity and low saturation voltage capabilities of bipolar transistors, making it ideal for switching and amplification in power electronics.
This 3-terminal device is housed in a TO-220 package with through-hole mount, facilitating integration into various industrial and electronic assemblies. It supports a maximum continuous collector current (Ic) of 10 A and can withstand a maximum collector-emitter voltage (Vceo) of 600 V, making it suitable for managing sizable electrical loads.
The device offers a power dissipation rating of 88 W and operates efficiently at switching speeds up to 1 MHz. The wide operating temperature range from -55°C to 175°C allows it to be used reliably in harsh industrial, automotive, and manufacturing environments.
Dimensionally, the device measures 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width, ensuring compactness for installation. The trench gate field stop series design enhances switching performance and energy efficiency with an energy rating of 221 mJ.
Applications span across industrial power management, motor drives, inverters, and switching power supplies. Its robust build quality made in China assures trustworthy operation in demanding systems requiring efficient power handling.
The IGBT combines ease of MOSFET gate drive with bipolar transistor performance. Maximum continuous collector current of 10 A supports medium power applications. Rated for 600 V collector-emitter voltage suitable for high voltage circuits.
Power dissipation up to 88 W enhances thermal handling capabilities. Switching speed of 1 MHz allows for efficient power control. Operating temperature range of -55°C to 175°C supports diverse conditions. Compact TO-220 through-hole package simplifies mounting and cooling.
Trench gate field stop technology improves device efficiency. Energy rating of 221 mJ makes it suitable for power electronics.
Explore more STMicroelectronics semiconductor components and IGBTs in EnvMart's extensive electronics category to find reliable devices suited for your industrial and manufacturing applications.
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Frequently Asked Questions
The maximum continuous collector current for this model is 10 A, making it suitable for medium power applications.
This IGBT has a maximum collector-emitter voltage rating of 600 V, allowing it to operate in high voltage applications.
The power dissipation capability is rated up to 88 W, which enhances thermal management during operation.
It features a switching speed of 1 MHz, enabling fast response and switching in power circuits.
The operating temperature range is from -55°C to 175°C, making it suitable for diverse industrial environments.
The dimensions of the TO-220 package are 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width.
This model is designed for through-hole mounting, facilitating integration into various industrial and electronic assemblies.
It is designed with trench gate field stop technology, which enhances switching performance and energy efficiency.
The energy rating of this IGBT is 221 mJ, suitable for power electronics applications.
The maximum gate-emitter voltage (VGEO) for this IGBT is 20 V.
This device is suitable for applications such as industrial power management, motor drives, inverters, and switching power supplies.
This IGBT is manufactured in China.
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