Infineon N-Channel IGBT 30 A 600 V 3-Pin TO-247 Through Hole IKW30N60H3FKSA1

Infineon IKW30N60H3FKSA1 is a high-performance N-Channel insulated gate bipolar transistor (IGBT) designed for switching applications requiring high efficiency and thermal robustness. Featuring a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 600 V, this device is housed in a durable 3-pin TO-247 through-hole package that ensures secure and reliable mounting for demanding industrial environments.

This IGBT leverages Infineon's advanced TrenchStop™ technology which delivers very low saturation voltage and low switching losses. It allows for fast switching with reduced electromagnetic interference (EMI), making it well-suited for power management systems, motor drives, inverters, and renewable energy converters.

The transistor is rated for operation in a harsh temperature range from -40°C up to a maximum junction temperature of 175°C, offering stability in extreme conditions. It integrates features such as high maximum gate-emitter voltage tolerance of ±20 V and a maximum power dissipation capability of 187 W, which supports high power density designs.

The device complies with JEDEC standards, is RoHS compliant, and includes lead-free lead plating, aligning with environmental regulations. Additionally, it carries an energy rating of 1.72 mJ, ensuring durability during electrical transient stresses.

This IGBT is ideal for industrial electronics, construction equipment, HVAC systems, and other commercial power control applications requiring efficient and reliable switching devices. Its low collector emitter saturation voltage (2.5 V max) enhances energy efficiency and reduces heat dissipation requirements.

The device features a 3-pin TO-247 through-hole package ensuring reliable mounting. Maximum power dissipation is rated at 187 W enabling efficient thermal management. Designed for high-speed switching with low saturation voltage for energy efficiency.

Operating temperature range from -40°C up to 175°C supports demanding applications. Equipped with JEDEC, RoHS compliance and lead-free plating for environmental safety. Maximum gate-emitter voltage tolerance is ±20 V ensuring gate circuit protection.

The transistor incorporates TrenchStop™ technology enhancing switching speed and performance. Typical maximum collector emitter saturation voltage is low at 2.5 V reducing power losses. Energy rating of 1.72 mJ ensures robustness in transient conditions.

Suitable for industrial and power electronics applications requiring fast switching and high efficiency. Explore more Infineon IGBTs and related semiconductor components on EnvMart for your high-performance electronic design needs.