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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKN01N60RC2ATMA1 |
| Series | 600 V Reverse Conducting Drive 2 |
| Maximum Operating Temperature | 150°C |
| Package Type | PG-SOT223 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 5.1W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Infineon IKN01N60RC2ATMA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) with an integrated diode, designed for reliable and efficient operation in electronic power management circuits.
This semiconductor component supports a maximum continuous collector current of 1 amp and a collector emitter voltage maximum of 600 volts, making it suitable for a variety of industrial, residential, and commercial applications requiring high voltage switching.
Packaged in a compact 3-pin PG-SOT223 surface mount package measuring 6.7 x 3.7 x 1.8 mm, it fits well in space-constrained PCB designs ensuring efficient thermal management with a maximum power dissipation rating of 5.1 watts.
With an operating temperature range from -40°C to 150°C, this IGBT maintains consistent performance even under harsh environmental conditions. The device supports a maximum gate emitter voltage of 20 volts, enabling precise and robust switching control.
The integrated diode enhances circuit protection and simplifies designs by eliminating the need for an external diode component. This device is humidity resistant, enhancing its reliability for outdoor applications and environments where moisture may be present.
Typical applications include ceiling fan control systems, countertop kitchen appliances, residential air conditioning systems, washing machines, and kitchen hoods, where efficient power regulation and switching are essential.
The IKN01N60RC2ATMA1 meets RoHS compliance standards, ensuring adherence to environmental regulations. Supports a maximum continuous collector current of 1 A. Capable of switching up to 600 V collector emitter voltage. Compact PG-SOT223 package with 3 pins for surface mounting.
Handles maximum power dissipation up to 5.1 W. Wide operational temperature range from -40°C to 150°C. Maximum gate emitter voltage rating of 20 V. Humidity resistant design suitable for outdoor use. Integrated diode simplifies circuitry and enhances protection.
Meets RoHS compliance for environmental safety.
EnvMart offers this Infineon IGBT for a wide array of industrial, electronic component, and power management applications. Browse similar semiconductor components to find compatible parts for your specialized use case.
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