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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STGW80V60DF |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | Trench Gate Field Stop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 120A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 469W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
STMicroelectronics STGW80V60DF N-Channel Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor combining the easy gate drive of a MOSFET and the high-current, low saturation voltage of a bipolar transistor in a single device. This IGBT is rated for a maximum continuous collector current of 120 A and a maximum collector-emitter voltage of 600 V.
This device is housed in a TO-247 package with through-hole mounting, featuring 3 pins and compact dimensions (20.15 mm height, 15.75 mm length, 5.15 mm width). It utilizes trench gate field stop technology to enable high efficiency and fast switching speeds up to 1 MHz, making it suitable for demanding power electronics applications.
The STGW80V60DF operates over a wide temperature range from -40°C to 175°C and has a maximum gate-emitter voltage rating of 20 V. Its power dissipation capability of 469 W ensures efficient heat management during operation.
This IGBT is ideal for industrial, power management, and electronic control systems where high current handling, fast switching, and reliability are important. Its robust construction supports usage in automotive and industrial environments, though it is not an automotive standard certified component.
Maximum continuous collector current of 120 A. Collector-emitter voltage rating of 600 V. Power dissipation at 469 W. Trench gate field stop series technology. Operating temperature range from -40°C to 175°C. Maximum gate-emitter voltage of 20 V.
TO-247 package with 3-pin through hole mounting. Switching speeds up to 1 MHz. Compact physical dimensions for use on standard PCBs.
Choose STMicroelectronics STGW80V60DF IGBT for efficient power switching in industrial electronics, laboratory equipment, and electronic control units. Visit the EnvMart category for more power semiconductor devices and IGBT options from trusted brands.
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